High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.
High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.
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DOI：
10.1038/s41467-018-03695-x
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发表时间：
2018-03-29
影响因子：
16.6
通讯作者：
Maki H
中科院分区：
文献类型：
--
作者：
Miyoshi Y;Fukazawa Y;Amasaka Y;Reckmann R;Yokoi T;Ishida K;Kawahara K;Ago H;Maki H
集成在硅芯片上的高速光发射器可以实现用于硅基光电子器件的新型架构，例如片上光学互连和硅光子学。然而，基于化合物半导体的传统光源由于难以在硅衬底上直接生长而面临与硅基平台集成的重大挑战。在这里，我们报告超高速（100 ps的响应时间），高度集成的石墨烯为基础的硅芯片黑体发射器在近红外区域，包括电信波长。它们的发射响应受到石墨烯与衬底接触的强烈影响，这取决于石墨烯层的数量。超高速发射可以通过经由衬底的表面极性声子的远程量子热输运来理解。我们展示了实时光通信，集成的二维阵列发射器，在空气中可操作的加盖发射器，以及光纤到发射器的直接耦合。这些发射器可以为高度集成的光电子和硅光子学开辟硅芯片上、小尺寸和高速发射器的新途径。将石墨烯与现有的硅技术相结合，可以为光电子和光子学的紧凑光源铺平道路。在这里，作者制造了集成在硅芯片上的基于石墨烯的黑体发射器阵列，在近红外区域高速工作。
High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics. Integrating graphene with existing silicon technologies may pave the way to compact light sources for optoelectronics and photonics. Here, the authors fabricate graphene-based arrays of blackbody emitters integrated on a silicon chip, operating in the near-infrared region at high speed.
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