Single electrons on solid neon as a solid-state qubit platform
Single electrons on solid neon as a solid-state qubit platform
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固体氖上的单电子作为固态量子位平台
DOI:
10.1038/s41586-022-04539-x
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发表时间:
2022
期刊:
影响因子:
64.8
通讯作者:
Murch, Kater W.
中科院分区:
文献类型:
--
作者:
Zhou, Xianjing;Koolstra, Gerwin;Zhang, Xufeng;Yang, Ge;Han, Xu;Dizdar, Brennan;Li, Xinhao;Divan, Ralu;Guo, Wei;Murch, Kater W.
Progress towards the realization of quantum computers requires persistent advances in their constituent building blocks—qubits. Novel qubit platforms that simultaneously embody long coherence, fast operation and large scalability offer compelling advantages in the construction of quantum computers and many other quantum information systems, –. Electrons, ubiquitous elementary particles of non-zero charge, spin and mass, have commonly been perceived as paradigmatic local quantum information carriers. Despite superior controllability and configurability, their practical performance as qubits through either motional or spin states depends critically on their material environment, –. Here we report our experimental realization of a qubit platform based on isolated single electrons trapped on an ultraclean solid neon surface in vacuum, , , , , , –. By integrating an electron trap in a circuit quantum electrodynamics architecture, , , , , –, we achieve strong coupling between the motional states of a single electron and a single microwave photon in an on-chip superconducting resonator. Qubit gate operations and dispersive readout are implemented to measure the energy relaxation timeT1of 15 μs and phase coherence timeT2over 200 ns. These results indicate that the electron-on-solid-neon qubit already performs near the state of the art for a charge qubit.
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DOI:
--
发表时间:
2003
期刊:
影响因子:
--
作者:
İ. Karakurt
通讯作者:
İ. Karakurt
影响因子:
2
作者:
S. Sheludiakov;J. Ahokas;J. Järvinen;L. Lehtonen;S. Vasiliev;Y. Dmitriev;D. M. Lee;V. Khmelenko
通讯作者:
V. Khmelenko
影响因子:
44.1
作者:
POLLACK, GL
通讯作者:
POLLACK, GL
影响因子:
2.9
作者:
Lyon, S. A.
通讯作者:
Lyon, S. A.
影响因子:
2
作者:
Sheludiakov, S.;Ahokas, J.;Järvinen, J.;Lehtonen, L.;Vasiliev, S.;Dmitriev, Yu. A.;Lee, D. M.;Khmelenko, V. V.
通讯作者:
Khmelenko, V. V.