The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities.

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities.
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DOI:
10.3390/nano13152228
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发表时间:
2023-08-01
期刊:
Nanomaterials (Basel, Switzerland)
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在室温下,在有图案的蓝宝石衬底(PSS)上制备了基于氮化镓的微棒腔,在脉冲光泵浦下实现了低阈值激光。由于螺纹位错(TDs)在不同位置的分布不同,采用共聚焦微光致发光光谱(μ-PL)分别分析了PSS衬底三角形岛屿顶部和三角形岛屿之间不同直径微棒的激光特性。μ-PL结果表明,直径为2 μm的微棒腔的最小阈值约为0.3 kW/cm2。采用时域有限差分方法研究了微棒腔内的窃窃廊模态。结合PSS衬底GaN中的位错分布,发现最强激光WGMs的分布总是向td较少的区域移动。这项工作揭示了激光模式与位错分布之间的联系,有助于开发低阈值、高效率的氮化镓微激光器。
Low-threshold lasing under pulsed optical pumping is demonstrated in GaN-based microrod cavities at room temperature, which are fabricated on the patterned sapphire substrates (PSS). Because the distribution of threading dislocations (TDs) is different at different locations, a confocal micro-photoluminescence spectroscopy (μ-PL) was performed to analyze the lasing properties of the different diameter microrods at the top of the triangle islands and between the triangle islands of the PSS substrates, respectively. The μ-PL results show that the 2 μm-diameter microrod cavity has a minimum threshold of about 0.3 kW/cm2. Whispering gallery modes (WGMs) in the microrod cavities are investigated by finite-difference time-domain simulation. Combined with the dislocation distribution in the GaN on the PSS substrates, it is found that the distribution of the strongest lasing WGMs always moves to the region with fewer TDs. This work reveals the connection between the lasing modes and the dislocation distribution, and can contribute to the development of low-threshold and high-efficiency GaN-based micro-lasers.
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