Mechanism on preferred orientation roof-type Cu6Sn5 grain formation in micro-bump with (111) nanotwinned copper UBM
Mechanism on preferred orientation roof-type Cu6Sn5 grain formation in micro-bump with (111) nanotwinned copper UBM
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(111)纳米孪晶铜UBM微凸块中优先取向屋顶型Cu6Sn5晶粒形成机制
DOI:
10.1016/j.matchar.2021.111316
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发表时间:
2021-09
影响因子:
4.7
通讯作者:
S.N. Zhang
中科院分区:
文献类型:
--
作者:
Yang Wu;Mingliang Huang;S.N. Zhang
The (111) nanotwinned copper films used as a novel under bump metallization (UBM) were applied in micro-bump solder technology for 3D packaging. The orientation and morphology of interfacial Cu 6 Sn 5 grains on (111) nanotwinned copper UBMs were investigated by soldering at different temperatures (250 °C and 300 °C). The (11−20) preferred orientation roof-type Cu 6 Sn 5 intermetallic compound (IMC) formed on Sn/(111) nanotwinned copper interface at a higher soldering temperature of 300 °C; while random orientation scallop-type Cu 6 Sn 5 grains formed on Sn/(111) nanotwinned copper interface at lower soldering temperature of 250 °C. The preferred orientation relationships between and interfacial roof-type Cu 6 Sn 5 grains and (111) nanotwinned copper UBMs are {11−20} Cu6Sn5 ||{111} copper in 〈0001〉 Cu6Sn5 ||〈011〉 copper and {11–20} Cu6Sn5 ||{111} copper in 〈10−10〉 Cu6Sn5 ||〈112〉 copper . Moreover, the average shear strength of the (111) nanotwinned copper/Sn/(111) nanotwinned copper solder interconnects soldered at 300 °C (40.19 MPa) is 30% higher than that soldered at 250 °C (31.09 MPa). This study provides an insight in controlling the morphology and orientation of interfacial Cu 6 Sn 5 grains on the (111) nanotwinned copper used as UBMs for the 3D packaging application. • Random intersecting angles of roof-type Cu 6 Sn 5 grains formed on (111) nt-Cu UBM. • ORs: {11–20} η ||{111} Cu in η || Cu , {11–20} η ||{111} Cu in η|| Cu . • Average shear strength of the solder interconnects soldered at 300 °C is 40.19 MPa.
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DOI:
10.1109/ectc.2019.00274
发表时间:
2019-05
期刊:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
影响因子:
--
作者:
Mingliang L. Huang;L. Zou
通讯作者:
Mingliang L. Huang;L. Zou
影响因子:
56.9
作者:
Chen, Kuan-Chia;Wu, Wen-Wei;Tu, K. N.
通讯作者:
Tu, K. N.
影响因子:
3
作者:
Chou, Tzu-Ting;Song, Rui-Wen;Duh, Jenq-Gong
通讯作者:
Duh, Jenq-Gong
DOI:
10.1109/ectc.2019.00265
发表时间:
2019-05
期刊:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
影响因子:
--
作者:
H. Hung;Sean Yang;I. Weng;Yan-Hao Chen;C. Kao
通讯作者:
H. Hung;Sean Yang;I. Weng;Yan-Hao Chen;C. Kao
影响因子:
9.4
作者:
Wen, Haiming;Topping, Troy D.;Lavernia, Enrique J.
通讯作者:
Lavernia, Enrique J.