Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
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应变Si0.7Ge0.3缓冲层上Ge量子点光致发光的系统研究
DOI:
10.1063/1.2901873
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发表时间:
2008-03
影响因子:
4
通讯作者:
Tao, Z.
中科院分区:
文献类型:
--
作者:
Lu, F.;Zhong, Zhenyang;Yang, H.;Jiang, Z.;Lin, J.;Tao, Z.
The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show different behaviors with increasing temperature. Under low excitation power, the intensity and the energy position of PL peak from small QDs have maximum values at a mediate temperature. Such anomalous behaviors of PL spectra are qualitatively explained by a model based on thermally activated resonant tunneling of holes from large QDs to small QDs.
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DOI:
10.1002/1521-3951(200103)224:1
发表时间:
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通讯作者:
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