Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer

Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
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应变Si0.7Ge0.3缓冲层上Ge量子点光致发光的系统研究

DOI:
10.1063/1.2901873
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发表时间:
2008-03
影响因子:
4
通讯作者:
Tao, Z.
Tao, Z.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Lu, F.;Zhong, Zhenyang;Yang, H.;Jiang, Z.;Lin, J.;Tao, Z.

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系统研究了在应变Si_(0.7)Ge_(0.3)缓冲层上同时生长的两类Ge量子点(小簇和大圆顶)的光致发光(PL)随温度和功率的变化.两种类型的量子点的两个PL峰被证明,并显示出不同的行为随着温度的升高。在较低的激发功率下,小量子点的发光峰的强度和能量位置在中等温度下有最大值。这种PL谱的反常行为定性地解释了一个模型的基础上的热激活共振隧穿的大量子点到小量子点的空穴。
The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show different behaviors with increasing temperature. Under low excitation power, the intensity and the energy position of PL peak from small QDs have maximum values at a mediate temperature. Such anomalous behaviors of PL spectra are qualitatively explained by a model based on thermally activated resonant tunneling of holes from large QDs to small QDs.
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