A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch
A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch
复制标题
一种减小单元间距的高压绝缘体上硅横向绝缘栅双极晶体管
DOI：
10.1088/1674-1056/22/2/027303
复制
发表时间：
2013-02
影响因子：
1.7
通讯作者：
Zhou Kun
中科院分区：
文献类型：
--
作者：
Wang Qi;Yao Guo-Liang;Wang Yuan-Gang;Zhou Kun
A high voltage (> 600 V) integrable silicon-on-insulator (SOI) trench-type lateral insulated gate bipolar transistor (LIGBT) with a reduced cell-pitch is proposed. The LIGBT features multiple trenches (MTs): two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX). Firstly, the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si. Secondly, oxide trenches bring in multi-directional depletion, leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field (RESURF) effect. Both increase the breakdown voltage (BV). Thirdly, oxide trenches fold the drift region around the oxide trenches, leading to a reduced cell-pitch. Finally, the oxide trenches enhance the conductivity modulation, resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop (Von). The oxide trenches cause a low anode?cathode capacitance, which increases the switching speed and reduces the turn-off energy loss (Eoff). The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 ?m, a Von of 1.03 V at 100 A/cm?2, a turn-off time of 250 ns and Eoff of 4.1?10?3 mJ. The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits, simplifying the fabrication processes.
登录
查看更多内容
DOI：
10.1016/j.mejo.2004.02.001
发表时间：
2004-05
期刊：
Microelectron. J.
影响因子：
--
作者：
Won-So Son;Y. Sohn;Sie-Young Choi
通讯作者：
Won-So Son;Y. Sohn;Sie-Young Choi
影响因子：
2.1
作者：
胡盛东;张波;李肇基
通讯作者：
胡盛东;张波;李肇基
变k介质埋层SOI高压器件的电场和击穿电压新结构及其分析模型
影响因子：
1.7
作者：
通讯作者：
--
影响因子：
4.9
作者：
X. Luo;Bo Zhang;Zhaoji Li;Yufeng Guo;Xinwei Tang;Yong Liu
通讯作者：
X. Luo;Bo Zhang;Zhaoji Li;Yufeng Guo;Xinwei Tang;Yong Liu
部分SOI高压器件垂直界面电场的新结构及其解析模型
影响因子：
1.7
作者：
Luo Xiao-Rong;Li Zhao-Ji;Zhang Bo;Hu Sheng-Dong
通讯作者：
Hu Sheng-Dong