Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell

Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell
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Zn-Ge-O 薄膜作为黄铜矿太阳能电池透明导电氧化物缓冲材料的生长

DOI:
10.1002/crat.202200145
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发表时间:
2022
影响因子:
1.5
通讯作者:
Yamada Akira
Yamada Akira
中科院分区:
材料科学4区
文献类型:
--
作者:
Egyna Dwinanri;Ito Satoru;Nishimura Takahito;Yamada Akira

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异质结薄膜太阳能电池p-n界面正能带偏移的重要性已经在作者先前关于n型层在确定开路电压中的作用的理论研究工作以及其他研究小组的实验工作中得到强调。具有低电子亲和力的n型材料具有满足生产高性能异质结薄膜太阳能电池的要求的潜力。在目前的工作中,通过将ZnO和GeO 2合金化以生长具有低电子亲和势的Zn-Ge-O薄膜,研究了用于黄铜矿异质结太阳能电池的新的替代透明导电氧化物材料。该薄膜是以四甲氧基锗为锗源,采用金属有机化学气相沉积法生长的。通过薄膜表征,证实了薄膜中较高浓度的Ge导致较低的电子亲合势和相对恒定的价带最大值。不同的[Ge] /([Zn] + [Ge])也会影响薄膜的形貌,从低浓度Ge下的多晶到高浓度Ge下的纳米晶聚集体。电子特性和初步的器件应用测试显示了Zn-Ge-O薄膜作为黄铜矿太阳能电池的替代n型层的前景。
The importance of positive band offset at the p–n interface of heterojunction thin‐film solar cells has been underlined in the authors' previous work on  theoretical study of the role of n‐type layer in determining open‐circuit voltage – and experimental work by other research groups. An n‐type material with low electron affinity has the potential to fulfill the requirements for producing a high‐performance heterojunction thin‐film solar cell. In this current work, a new alternative transparent conductive oxide material for chalcopyrite heterojunction solar cells is investigated by alloying ZnO and GeO2to grow a Zn‐Ge‐O thin‐film with low electron affinity. The film is grown by metal organic chemical vapor deposition with tetramethoxygermanium as the Ge source. Through film characterization, it is confirmed that higher concentrations of Ge in the film result in lower electron affinities and relatively constant valence band maximums. Different [Ge] / ([Zn] + [Ge]) also affects the film morphology, from polycrystalline at a lower concentration of Ge to aggregation of nanocrystals at a higher concentration of Ge. Electronic characterization and preliminary device application test show promising results for the future of the Zn‐Ge‐O thin‐film as an alternative n‐type layer for chalcopyrite solar cells.
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