Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes
Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes
复制标题
调整纳米柱阵列以提高 GaN 基发光二极管的光致发光提取效率
DOI:
10.1088/1674-1056/22/4/048101
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发表时间:
2013-04
影响因子:
1.7
通讯作者:
Zhang Bai-Jun
中科院分区:
文献类型:
--
作者:
Yang Wei-Ming;Chen Tu-Fu;Jin Chong-Jun;Zhang Bai-Jun
We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.
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影响因子:
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通讯作者:
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影响因子:
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