Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes
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调整纳米柱阵列以提高 GaN 基发光二极管的光致发光提取效率

DOI:
10.1088/1674-1056/22/4/048101
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发表时间:
2013-04
期刊:
影响因子:
1.7
通讯作者:
Zhang Bai-Jun
Zhang Bai-Jun
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Yang Wei-Ming;Chen Tu-Fu;Jin Chong-Jun;Zhang Bai-Jun

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我们展示了用纳米球光刻技术在氮化镓基发光二极管(led)表面制造六边形纳米柱阵列。通过改变氧等离子体刻蚀时间,我们可以调整柱的大小和形状。纳米柱呈截锥形。纳米柱阵列作为一种逐渐有效的折射率匹配器,减少了反射,增加了光锥。研究发现,有图案的表面吸收更多的抽运光。为了比较led的提取效率,需要在固定泵浦功率下将光致发光功率谱与总吸收率归一化,从而得到正确的光致发光提取效率增强因子和优化的结构。提取效率的最高增强因子为10.6。
We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.
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