Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films
Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films
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双相对Bi掺杂钛酸铅锶薄膜介电性能的影响
DOI：
10.1016/j.jssc.2010.09.007
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发表时间：
2010-11
影响因子：
3.3
通讯作者：
Dai, J. L.
中科院分区：
文献类型：
--
作者：
Song, C. L.;Du, P. Y.;Tu, Y.;Weng, W. J.;Han, G. R.;Zhao, Y. L.;Li, X. T.;Dai, J. L.
采用溶胶-凝胶法制备了掺杂不同浓度Bi的Pb0.4Sr0.6TiO3(PST)薄膜。分别通过X射线衍射（XRD）、扫描电子显微镜（SEM）和阻抗分析仪测量了这些薄膜的相状态、表面形貌和介电性能。结果表明，当x=0.15时，获得了具有最大介电常数和最小介电损耗的薄膜。当 x<0.15 时，薄膜中仅存在纯 PST 钙钛矿相。当0.2<x<0.4时，获得PST/Bi2Ti2O7双相。 x=0.67 时获得纯 Bi2Ti2O7 烧绿石相薄膜。双相薄膜具有高可调性和高品质因数（FOM）。 PST/Bi2Ti2O7双相薄膜的FOM比纯钙钛矿相或纯烧绿石相形成的薄膜高约6倍。
Pb0.4Sr0.6TiO3(PST) thin films doped with various concentration of Bi were prepared by a sol–gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi2Ti2O7biphase were obtained. The thin films with pure Bi2Ti2O7pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi2Ti2O7biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.
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影响因子：
3.2
作者：
M. Tsai;S. Sun;T. Tseng
通讯作者：
M. Tsai;S. Sun;T. Tseng
影响因子：
4
作者：
Menka Jain;S. Majumder;R. Katiyar;D. C. Agrawal;A. Bhalla
通讯作者：
Menka Jain;S. Majumder;R. Katiyar;D. C. Agrawal;A. Bhalla
影响因子：
2.1
作者：
Xiaohua Sun;Huiming Huang;Sheng-xiang Wang;Meiya Li;Xingzhong Zhao
通讯作者：
Xiaohua Sun;Huiming Huang;Sheng-xiang Wang;Meiya Li;Xingzhong Zhao
影响因子：
4
作者：
Hongfang Zhang;S. Or;H. Chan
通讯作者：
Hongfang Zhang;S. Or;H. Chan
影响因子：
4.1
作者：
V. Varadan;K. A. Jose;V. Varadan
通讯作者：
V. Varadan;K. A. Jose;V. Varadan