GaN-based distributed feedback laser diodes for optical communications
GaN-based distributed feedback laser diodes for optical communications
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用于光通信的基于 GaN 的分布式反馈激光二极管
DOI：
10.1117/12.2527074
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Gwyn S
中科院分区：
文献类型：
--
作者：
Gwyn S
在过去的20年里，氮化镓（GaN）的研究已经从LED照明发展到激光二极管（LD），应用范围从量子到医疗和通信。以前，已经报道了现成的GaN LD用于自由空间和水下通信。然而，存在其中选择单个发射波长的能力是高度期望的应用，即在原子钟或滤波的自由空间通信系统中。为了实现这一点，使用了分布反馈（DFB）几何结构。由于III族氮化物材料系统中埋入式光栅的过度生长步骤的复杂性，GaN DFB具有蚀刻到侧壁中的光栅以确保单模操作，实现的波长范围从405 nm到435 nm。开发这些器件的主要动机是用于原子钟应用中锶离子（Sr+）的冷却，但它们用于光通信的可行性也已被研究。在未经过滤的系统中观察到超过1 Gbit/s的数据传输速率，目前正在研究其过滤通信的可行性。最终，期望通过波分复用（WDM）或正交频分复用（OFDM）进行传输，以确保数据更相干和有效地通信。我们目前的GaN DFB的特性的结果，并证明其在过滤的光通信系统中使用的能力。
Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.
具有深蚀刻侧壁光栅的 434 nm InGaN/GaN DFB 激光二极管
DOI：
--
发表时间：
2016
期刊：
SPIE OPTO
影响因子：
--
作者：
T. Slight;O. Odedina;W. Meredith;K. Docherty;A. Kelly
通讯作者：
A. Kelly
影响因子：
2.3
作者：
T. Slight;S. Stanczyk;S. Watson;A. Yadav;S. Grzanka;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;S. Gwyn;A. Kelly
通讯作者：
T. Slight;S. Stanczyk;S. Watson;A. Yadav;S. Grzanka;E. Rafailov;P. Perlin;S. Najda;M. Leszczynski;S. Gwyn;A. Kelly
影响因子：
1.9
作者：
Yuan Zhong;Xiaopeng Zhu;Guofeng Song;Yidong Huang;Lianghui Chen
通讯作者：
Yuan Zhong;Xiaopeng Zhu;Guofeng Song;Yidong Huang;Lianghui Chen