n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation
n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation
复制标题
通过掺磷热丝化学气相沉积生长金刚石的 n 型掺杂
DOI：
10.1007/s00339-020-04060-w
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
S. Koizumi
中科院分区：
文献类型：
--
作者：
Y. Katamune;D. Mori;Daisuke Arikawa;A. Izumi;T. Shimaoka;K. Ichikawa;S. Koizumi
采用热丝化学气相沉积（HFCVD）方法，以甲烷和三甲基膦为掺杂源，在（111）取向金刚石衬底上外延生长了n型半导体金刚石薄膜。二次离子质谱分析表明，磷原子以1018- 1019 cm − 3的浓度范围从气相中掺入到薄膜中。霍尔效应测量证实了在高达873 K的宽温度范围内的n型导电性。在灯丝中钨原子的浓度约为1018 cm − 3时，电子从约0.57 eV的磷施主能级被热激活为主要载流子。这些结果表明，HFCVD具有应用于制造磷浓度不低于1018 cm-3的金刚石电子器件的n型掺杂工艺的潜力。
Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 1018–1019cm−3from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 1018cm−3from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 1018cm−3.
影响因子：
4
作者：
M. Katagiri;J. Isoya;S. Koizumi;H. Kanda
通讯作者：
M. Katagiri;J. Isoya;S. Koizumi;H. Kanda
影响因子：
1.5
作者：
Umezawa, Hitoshi;Shikata, Shin-ichi;Funaki, Tsuyoshi
通讯作者：
Funaki, Tsuyoshi