The production of oxygenated polycrystalline graphene by one-step ethanol-chemical vapor deposition.
The production of oxygenated polycrystalline graphene by one-step ethanol-chemical vapor deposition.
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DOI：
10.1016/j.carbon.2011.04.070
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发表时间：
2011-10-01
期刊：
影响因子：
10.9
通讯作者：
Mulchandani, Ashok
中科院分区：
文献类型：
--
作者：
Paul, Rajat K.;Badhulika, Sushmee;Niyogi, Sandip;Haddon, Robert C.;Boddu, Veera M.;Costales-Nieves, Carmen;Bozhilov, Krassimir N.;Mulchandani, Ashok
通过简单的乙醇化学气相沉积（CVD）技术在约1分钟内在Cu箱（~ 1英寸2）上合成大面积单层和双层石墨烯膜。拉曼光谱和高分辨率透射电子显微镜显示合成的石墨烯膜具有多晶结构，其具有2-5 nm的单个微晶尺寸，其是高达1000°C的温度的函数。X-射线光电子能谱研究表明，约3原子%的羧基（COOH）的功能基团在生长过程中形成。以多晶石墨烯为导电沟道的场效应晶体管器件（Lc=10 μm; Wc=50 μm）显示了p型半导体行为，具有高驱动电流和约35 V的狄拉克点。生长具有半导体性质和容易官能化的基团的大面积多晶石墨烯膜的分步方法应该有助于实现多晶石墨烯用于制备纳米材料的潜力。纳米电子学、传感器和能量存储设备。
Large-area mono- and bilayer graphene films were synthesized on Cu foil (~ 1 inch2) in about 1 min by a simple ethanol-chemical vapor deposition (CVD) technique. Raman spectroscopy and high resolution transmission electron microscopy revealed the synthesized graphene films to have polycrystalline structures with 2–5 nm individual crystallite size which is a function of temperature up to 1000°C. X-ray photoelectron spectroscopy investigations showed about 3 atomic% carboxylic (COOH) functional groups were formed during growth. The field-effect transistor devices fabricated using polycrystalline graphene as conducting channel (Lc=10 μm; Wc=50 μm) demonstrated a p-type semiconducting behavior with high drive current and Dirac point at ~35 V. This simple one-step method of growing large area polycrystalline graphene films with semiconductor properties and easily functionalizable groups should assist in the realization of potential of polycrystalline graphene for nanoelectronics, sensors and energy storage devices.
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