Graphene nanomesh.
Graphene nanomesh.
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DOI：
10.1038/nnano.2010.8
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发表时间：
2010-03
影响因子：
38.3
通讯作者：
中科院分区：
文献类型：
--
作者：
石墨烯在电子领域具有巨大的应用潜力，但由于石墨烯是一种零禁带的半金属材料，因此不能用于室温下工作的有效场效应管。将石墨烯薄片加工成宽度小于10 nm的纳米带可以打开足够大的带隙，足以满足室温晶体管的操作，但纳米带器件通常具有低驱动电流或跨导。此外，实际的器件和电路将需要生产密集的有序纳米带阵列，这是一个巨大的挑战。在这里，我们报告了一种新的石墨烯纳米结构的生产-我们称之为石墨烯纳米网格-可以在一大片石墨烯中打开带隙，从而形成半导体薄膜。采用嵌段共聚光刻法制备了不同周期的纳米颗粒，其颈宽可达5 nm。石墨烯纳米网状场效应晶体管可以支持的电流几乎是单个石墨烯纳米带器件的100倍，开关比-可以与单个纳米带器件中实现的值相媲美-可以通过改变颈部宽度进行调整。用于制造纳米网格器件的嵌段共聚光刻方法本质上是可扩展的，并且可以使用标准的半导体工艺合理地设计和制造基于石墨烯的器件和电路。
Graphene has significant potential for application in electronics, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap. Processing graphene sheets into nanoribbons with widths of less than 10nm can open up a bandgap that is large enough for room temperature transistor operation, but nanoribbon devices often have low driving currents or transconductances. Moreover, practical devices and circuits will require the production of dense arrays of ordered nanoribbons, which is of significant challenge. Here we report the production of a new graphene nanostructure - which we call graphene nanomesh - that can open up a band gap in a large sheet of graphene to create a semiconducting thin film. The nanomeshes are prepared with block copolymer lithography and can have variable periodicities and neck widths down to 5 nm. Graphene nanomesh field-effect transistors can support currents nearly 100 times greater than individual graphene nanoribbon devices, and the on-off ratio - which is comparable with the values achieved in individual nanoribbon devices - can be tuned by varying the neck width. The block copolymer lithography approach used to make the nanomesh devices is intrinsically scalable and could allow for the rational design and fabrication of graphene-based devices and circuits with standard semiconductor processing.
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影响因子：
4.6
作者：
Xu, T;Kim, HC;Russell, TP
通讯作者：
Russell, TP
影响因子：
10.8
作者：
Bai, Jingwei;Duan, Xiangfeng;Huang, Yu
通讯作者：
Huang, Yu
DOI：
10.1016/j.physe.2007.06.020
发表时间：
2007-12-01
影响因子：
3.3
作者：
Chen, Zhihong;Lin, Yu-Ming;Avouris, Phaedon
通讯作者：
Avouris, Phaedon
影响因子：
38.3
作者：
Tung, Vincent C.;Allen, Matthew J.;Kaner, Richard B.
通讯作者：
Kaner, Richard B.
影响因子：
2.8
作者：
Tan, Y.-W.;Zhang, Y.;Kim, P.
通讯作者：
Kim, P.