Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units
Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units
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用于背光单元的具有图案化碳纳米管的新型平面栅电子源的制造和场发射特性
DOI：
10.1088/1674-4926/34/6/064005
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发表时间：
2013-06
期刊：
影响因子：
--
通讯作者：
郭太良
中科院分区：
文献类型：
--
作者：
张永爱;林锑杭;曾祥耀;周雄图;郭太良
本文介绍了一种新型的平面栅极电子源与电泳沉积形成的图案化碳纳米管（CNTs）的液晶显示器（LCD）的背光单元（BLU）的制造。利用Ansys软件模拟了该结构的电场分布和电子轨迹。通过数值模拟对器件结构进行了优化。场发射结果表明，发射电流强烈地依赖于阴极-栅极间隙和栅极电压。直接观察荧光屏上的发光图像发现，随着栅极电压的增加，电子束在横向上沿着有明显的扩展，这与模拟结果吻合较好。器件的发光效率和亮度分别达到49.1 lm/W和5500 cd/m2。所有的结果表明，新型的平面栅极电子源与图案化的碳纳米管可能会导致实际应用的电子源的基础上，平板灯的蓝光在液晶显示器。
This paper describes the fabrication of backlight units (BLUs) for a liquid crystal display (LCD) based on a novel planar-gate electron source with patterned carbon nanotubes (CNTs) formed by electrophoretic deposition. The electric field distributions and electron trajectories of this triode structure are simulated according to Ansys software. The device structure is optimized by supporting numerical simulation. The field emission results show that the emission current depends strongly on the cathode-gate gap and the gate voltage. Direct observation of the luminous images on a phosphor screen reveals that the electron beams undergo a noticeable expansion along the lateral direction with increasing gate voltage, which is in good agreement with the simulation results. The luminous efficiency and luminance of the fabricated device reaches 49.1 lm/W and 5500 cd/m2, respectively. All results indicate that the novel planar-gate electron source with patterned CNTs may lead to practical applications for an electron source based on a flat lamp for BLUs in LCD.
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影响因子：
4
作者：
Choi, WB;Chung, DS;Kim, JM
通讯作者：
Kim, JM
影响因子：
4.1
作者：
Y. Jung;G. Son;Jinny Park;Y. Kim;A. Berdinsky;J. Yoo;Chong-Yun Park
通讯作者：
Y. Jung;G. Son;Jinny Park;Y. Kim;A. Berdinsky;J. Yoo;Chong-Yun Park
DOI：
10.1116/1.1851535
发表时间：
2004-07
期刊：
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)
影响因子：
--
作者：
Jae-Hong Park;J. Moon;Jae-Hee Han;A. Berdinsky;J. Yoo;J. Nam;Jonghwan Park;C.G. Lee;D. Choi;Byeong Kyoo Shon;H. Chung;S. Kwon
通讯作者：
Jae-Hong Park;J. Moon;Jae-Hee Han;A. Berdinsky;J. Yoo;J. Nam;Jonghwan Park;C.G. Lee;D. Choi;Byeong Kyoo Shon;H. Chung;S. Kwon
影响因子：
6.7
作者：
Yingbin Gao;Xiaobing Zhang;W. Lei;Min Liu;Yuning Zhang;D. Engelsen
通讯作者：
Yingbin Gao;Xiaobing Zhang;W. Lei;Min Liu;Yuning Zhang;D. Engelsen
影响因子：
6.7
作者：
Yong-soo Choi;J. Kang;Hee‐Kyung Kim;Byeongjun Lee;Chun‐Gyoo Lee;Sungkee Kang;Y. Jin;Ji Whan Kim-Ji-Wha
通讯作者：
Yong-soo Choi;J. Kang;Hee‐Kyung Kim;Byeongjun Lee;Chun‐Gyoo Lee;Sungkee Kang;Y. Jin;Ji Whan Kim-Ji-Wha