The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
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双光子吸收对集成微波光子链路动态范围的影响
DOI：
10.1117/12.2546601
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Knights, Andrew P.
中科院分区：
文献类型：
--
作者：
Bass, Jake A.;Brea, Brandon;Tran, Huong;Du, Wei;Soref, Richard;Yu, Shui-Qing;Reed, Graham T.;Knights, Andrew P.
近年来，绝缘体上硅（SOI）平台上的集成微波光子学（IMWP）引起了广泛关注。 SOI 作为无源器件的平台，已在 1.55 μm 波长下进行了研究。人们已经认识到，硅在此波长下会受到双光子吸收（TPA）的影响，这可能会限制微波光子链路的动态范围。 TPA 效应在较长波长处减弱，并在 2.2 μm 波长处完全消失。到目前为止，在 IMWP 背景下 TPA 对 SOI 平台性能的详细影响尚未得到充分研究。在这项工作中，进行了系统仿真，以研究非线性TPA对1.55 μm SOI微波光子链路性能的影响，特别是深入研究了系统的动态范围。此外，通过缩放器件设计来研究 1.55 至 2.2 μm 波长下的系统性能，避免了 TPA 的寄生效应。根据理论分析，2.2 μm 微波光子链路的性能优于 1.55 μm 微波光子链路，符合预期。 1.55 μm 处的带状波导和肋状波导的 P1dB 点分别为 3.75 mW 和 69.54 mW，而在 2.2 μm 处，这些波导在整个模拟范围内（输入功率高达 1 W）呈线性表现，这是由于 TPA 效应显着降低。值得注意的是，SOI 避免寄生 TPA 的波长与新兴 GeSn 激光器和光电探测器的工作波长非常匹配。
Recently, Integrated Microwave Photonics (IMWP) on Silicon-on-Insulator (SOI) platform has attracted much attention. SOI as a platform for passive devices has been studied for operation at a wavelength of 1.55 μm. It has been acknowledged that Si suffers from Two-Photon Absorption (TPA) at this wavelength, which potentially limits the dynamic range of microwave photonic links. The TPA effect diminishes at longer wavelengths, and completely vanishes at a wavelength of 2.2 μm. So far, the detailed effects of TPA on the performance of the SOI platform in the context of IMWP have not been well-explored. In this work, a systemic simulation has been performed in order to investigate the effects of nonlinear TPA on the performance of SOI microwave photonic links at 1.55 μm, particularly the dynamic range of the system was studied in-depth. Furthermore, system performance at wavelengths from 1.55 to 2.2 μm was investigated by scaling the device design, where the parasitic effects of TPA are avoided. Based on theoretical analysis, the result showing microwave photonic links at 2.2 μm outperform that at 1.55 μm was obtained as expected. Strip and rib waveguides at 1.55 μm show P1dB points of 3.75 mW and 69.54 mW, respectively, and at 2.2 μm, these waveguides performed linearly throughout the simulated range (up to 1 W of input power) which is due to the dramatically reduced TPA effect. It is noted that the wavelengths at which SOI avoids parasitic TPA match well with the working wavelengths of emerging GeSn lasers and photodetectors.
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SiGeSn/GeSn/SiGeSn 量子阱结构和硅上光泵浦激光器的研究
DOI：
--
发表时间：
2019
期刊：
Conference on Lasers and Electro-Optics
影响因子：
--
作者：
Yiyin Zhou;J. Margetis;G. Abernathy;Wei Dou;P. Grant;Bader Alharthi;W. Du;Alicia Wadsworth;Q. Guo;Huong Tran;Solomon Ojo;A. Mosleh;S. Ghetmiri;G. Thompson;Jifeng Liu;G. Sun;R. Soref;J. Tolle;Baohua Li;M. Mortazavi;Shu Yu
通讯作者：
Shu Yu
用于中红外集成微波光子学的硅基 GeSn 光电探测器
DOI：
--
发表时间：
2019
期刊：
International Topical Meeting on Microwave Photonics
影响因子：
--
作者：
S. Ghetmiri;Huong Tran;A. Mosleh;W. Du;Jifeng Liu;Baohua Li;M. Mortazavi;Shui
通讯作者：
Shui
影响因子：
2.8
作者：
Grant, Perry C.;Dou, Wei;Yu, Shui-Qing
通讯作者：
Yu, Shui-Qing
硅高折射率波导中双光子吸收和自由载流子吸收的 FDTD 分析
影响因子：
4.7
作者：
N. Suzuki
通讯作者：
N. Suzuki
影响因子：
3.6
作者：
Shen, Li;Healy, Noel;Peacock, Anna C.
通讯作者：
Peacock, Anna C.