Improved photocatalytic activity and stability of InGaN quantum dots/C3N4 heterojunction photoelectrode for CO2 reduction and hydrogen production
Improved photocatalytic activity and stability of InGaN quantum dots/C3N4 heterojunction photoelectrode for CO2 reduction and hydrogen production
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提高InGaN量子点/C3N4异质结光电极用于CO2还原和制氢的光催化活性和稳定性
DOI:
10.1088/1361-6528/ac2450
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发表时间:
2021-09
期刊:
影响因子:
3.5
通讯作者:
Lu Shulong
中科院分区:
文献类型:
--
作者:
Xing Zhiwei;Zhang Xue;Yang Wenxian;Li Huan;Zhao Yukun;Wei Tieshi;Bian Lifeng;Chen Guifeng;Qin Hua;Lu Shulong
Photocatalytic conversion of CO2 to produce fuel is considered a promising approach to reduce CO2 emissions and tackle energy crisis. GaN-based materials have been studied for CO2 reduction because of their excellent optical properties and band structure. However, low photocatalytic activity and severe photocorrosion of GaN-based photoelectrode greatly limit their applications. In this work, photocatalytic activity was improved by adopting InGaN quantum dots (QDs) combined with C3N4 nano-sheets as photoanode, and thus the efficiency of CO2 reduction and the selectivity of hydrogen production were increased significantly. In addition, the photoelectron-chemical corrosion of photoelectrodes has been apparently controlled. InGaN QDs/C3N4 has the highest CO and H2 productions rates of 14.69 μmol mol−1 h−1 and 140 μmol mol−1 h−1 which were 2.2 times and 14.5 times than that of InGaN film photoelectrode, respectively. The enhancement of photocatalytic activity is attributed to C3N4 modification and a large electric dipole forming on the surface of InGaN QDs, which facilitate the separation and transfer of photo-generated carriers and thus promote CO2 reduction reaction. This work provides a promising strategy for the development of GaN-based photoanodes with superior stability and efficiency.
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影响因子:
2.3
作者:
Chen Guifeng;Li Yuan;Zhang Hui;Wang Yaxin;Xie Luxiao;Guo Tianyu;Xie Xinjian;Tao Junguang;Liu Guodong
通讯作者:
Liu Guodong
影响因子:
6.2
作者:
Che, Haibing;Ngaw, Chee Keong;Teng, Weili
通讯作者:
Teng, Weili
影响因子:
3.3
作者:
Fan, Wenqing;Zhang, Qinghong;Wang, Ye
通讯作者:
Wang, Ye
影响因子:
8.4
作者:
Zaki N. Zahran;Yuta Tsubonouchi;E. Mohamed;M. Yagi
通讯作者:
Zaki N. Zahran;Yuta Tsubonouchi;E. Mohamed;M. Yagi
影响因子:
12.9
作者:
Albero, Josep;Peng, Yong;Garcia, Hermenegildo
通讯作者:
Garcia, Hermenegildo