Improved ability of artificial photosynthesis by using InGaN/AlGaN/GaN electrode

Improved ability of artificial photosynthesis by using InGaN/AlGaN/GaN electrode
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利用InGaN/AlGaN/GaN电极提高人工光合作用能力

DOI:
10.7567/1882-0786/ab495c
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发表时间:
2019-10
影响因子:
2.3
通讯作者:
Liu Guodong
Liu Guodong
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Chen Guifeng;Li Yuan;Zhang Hui;Wang Yaxin;Xie Luxiao;Guo Tianyu;Xie Xinjian;Tao Junguang;Liu Guodong

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我们已成功展示了使用 InGaN/AlGaN/GaN 光电极增强的 CO2 转化能力。通过改变光吸收层来提高阴极电势,有效结合了AlGaN/GaN结构的压电极化效应和InGaN对光的高吸收作用,提高了系统的CO2转化能力。我们的结果表明,光电流比 AlGaN/GaN 产生的光电流增加了两倍。此外,转化为CO的能力也得到增强。除了H2和CO之外,碳氢化合物的浓度也得到提高。
We have successfully demonstrated the enhanced capability of CO2 conversion using InGaN/AlGaN/GaN photoelectrode. The CO2 conversion ability of the system is improved due to the improvement of the cathode potential by changing the light absorbing layer which effectively combines the piezoelectric polarization effect of the AlGaN/GaN structure and the high absorption for light by InGaN. Our results suggest that the photocurrent is increased by two times than that produced by AlGaN/GaN. Furthermore, the ability of convert to CO is enhanced. Aside from H2 and CO, the concentration of hydrocarbons is also improved.
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