Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots.
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots.
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DOI：
10.1038/s41598-017-07483-3
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发表时间：
2017-08-02
影响因子：
4.6
通讯作者：
Lee YJ
中科院分区：
文献类型：
--
作者：
Lin TN;Santiago SRM;Yuan CT;Chiu KP;Shen JL;Wang TC;Kuo HC;Chiu CH;Yao YC;Lee YJ
采用脉冲激光烧蚀法制备了平均直径为3.5 nm的石墨烯量子点。合成的GQDs可以显著改善InGaN/InAlGaN UV发光二极管的光学和电学性能。在LED表面掺入GQDs后，LED的电致发光增强，串联电阻降低。随着GQD浓度的增加，LED的发射光（串联电阻）也相应增加（减少）。引入浓度为0.9 mg/ml的GQDs后，光输出功率最大可提高71%。引入GQDs后，led的性能得到了改善，其原因是通过波导模式的光提取和载流子从GQDs转移到有源层来实现光子回收。
Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.
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影响因子：
19
作者：
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通讯作者：
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影响因子：
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