Structure and optically pumped lasing from nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
Structure and optically pumped lasing from nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
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ZnS 薄膜热氧化制备的纳米晶 ZnO 薄膜的结构和光泵浦激光
DOI：
10.1063/1.1498958
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发表时间：
2002-08
影响因子：
3.2
通讯作者：
X.T.Zhang,Y.C.Liu,L.G.Zhang,J.Y.Zhang,Y.M.Liu,X.W.Fan,X.G.Kong
中科院分区：
文献类型：
--
作者：
X.T.Zhang,Y.C.Liu,L.G.Zhang,J.Y.Zhang,Y.M.Liu,X.W.Fan,X.G.Kong
本文采用低压金属有机化学气相沉积（MOCVD）技术在SiO2衬底上生长ZnS薄膜，通过热氧化法制备了高质量的纳米ZnO薄膜，并观察了其光泵浦激光特性。X射线衍射（XRD）分析表明，高质量的ZnS薄膜具有（111）择优取向。从XRD图谱可以看出，ZnS在500 °C的退火温度（Ta）下转变为ZnO，并且在Ta ~ 700 °C下完全转变为ZnO。所得的ZnO薄膜具有多晶六角纤锌矿结构。在薄膜中观察到五阶拉曼散射，这表明晶格中存在较大的形变能。在光致发光（PL）谱中，对于不同退火温度的样品，近带边（NBE）PL峰随着退火温度的升高而发生明显的蓝移，半高宽（FWHM）逐渐减小。我们认为束缚激子的发射在NBE PL中起着重要的作用。900 °C退火的样品在室温下获得了NBE在3.30 eV处的62 meV半高宽的强PL。在室温下，紫外发射与深能级发射的PL强度之比高达98，表明纳米ZnO薄膜的高质量。
In this article, we observe the optically pumped lasing from the high-quality nanocrystalline ZnO thin films obtained by thermal oxidation of ZnS thin films, which were grown on SiO2 substrates by low-pressure-metalorganic chemical vapor deposition technique. The x-ray diffraction (XRD) patterns indicate that high-quality ZnS films possess a preferred (111) orientation. ZnS has a transformation to ZnO at an annealing temperature (Ta) of 500 °C, and fully transforms into ZnO at Ta⩾700 °C from the XRD patterns. The obtained ZnO films possess a polycrystalline hexagonal wurtzite structure. The fifth-order Raman scattering is observed in the films, which indicates that a large deformation energy exists in the lattice. In photoluminescence (PL), spectra, for all the samples with different annealing temperatures, the near-band-edge (NBE) PL peak has a pronounced blueshift with increasing annealing temperature, while the full width at half maximum (FWHM) decreases gradually. We think that emissions of the bound excitons play an important role in NBE PL. A strong PL with a FWHM of 62 meV at 3.30 eV from NBE has been obtained at room temperature for the samples annealed at 900 °C. The PL intensity ratio of the ultraviolet emission to the deep-level emission is as high as 98 at room temperature, indicating the high-quality of the nanocrystalline ZnO films.
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影响因子：
3.7
作者：
J. Scott
通讯作者：
J. Scott
影响因子：
2.1
作者：
P. Zu;Zikang Tang;George C. K. Wong;M. Kawasaki;A. Ohtomo;H. Koinuma;Y. Segawa
通讯作者：
P. Zu;Zikang Tang;George C. K. Wong;M. Kawasaki;A. Ohtomo;H. Koinuma;Y. Segawa
DOI：
10.1143/jjap.35.l74
发表时间：
1996-01-15
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
作者：
Nakamura, S;Senoh, M;Sugimoto, Y
通讯作者：
Sugimoto, Y
影响因子：
3.7
作者：
CALLENDER, RH;SUSSMAN, SS;CHANG, RK
通讯作者：
CHANG, RK
影响因子：
3.2
作者：
H. Lozykowski;V. Shastri
通讯作者：
H. Lozykowski;V. Shastri