Narrower Nanoribbon Biosensors Fabricated by Chemical Lift-off Lithography Show Higher Sensitivity.
Narrower Nanoribbon Biosensors Fabricated by Chemical Lift-off Lithography Show Higher Sensitivity.
复制标题
化学升降光刻制造的较窄的纳米替比生物传感器显示出更高的灵敏度。
DOI:
10.1021/acsnano.0c07503
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发表时间:
2021-01-26
期刊:
影响因子:
17.1
通讯作者:
Andrews AM
中科院分区:
文献类型:
--
作者:
Zhao C;Liu Q;Cheung KM;Liu W;Yang Q;Xu X;Man T;Weiss PS;Zhou C;Andrews AM
Wafer-scale nanoribbon field-effect transistor (FET) biosensors fabricated by straightforward top-down processes are demonstrated as sensing platforms with high sensitivity to a broad range of biological targets. Nanoribbons with 350-nm widths (700-nm pitch) were patterned by chemical lift-off lithography using high throughput, low-cost commercial digital versatile disks (DVDs) as masters. Lift-off lithography was also used to pattern ribbons with 2-μm or 20-μm widths (4-μm or 40-μm pitches, respectively) using masters fabricated by photolithography. For all widths, highly aligned, quasi-one-dimensional (1D) ribbon arrays were produced over centimeter length scales by sputtering to deposit 20-nm-thin-film In2O3 as the semiconductor. Compared to 20-μm-wide microribbons, FET sensors with 350-nm wide nanoribbons showed higher sensitivity to pH over a broad range (pH 5 to 10). Nanoribbon FETs functionalized with a serotonin-specific aptamer demonstrated larger responses to equimolar serotonin in high ionic strength buffer compared to microribbon FETs. Field-effect transistors with 350-nm-wide nanoribbons functionalized with single-stranded DNA showed greater sensitivity to detecting complementary DNA hybridization vs 20-μm microribbon FETs. In all, we illustrate facile fabrication and use of large-area, uniform In2O3 nanoribbon FETs for ion, small molecule, and oligonucleotide detection where higher surface-to-volume ratios translate to better detection sensitivities. Table of Contents Graphic and Synopsis
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影响因子:
4.1
作者:
Jeon, Jin-Hyeok;Cho, Won-Ju
通讯作者:
Cho, Won-Ju
影响因子:
21.8
作者:
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影响因子:
10.8
作者:
Cheung, Kevin M.;Abendroth, John M.;Weiss, Paul S.
通讯作者:
Weiss, Paul S.
影响因子:
8.9
作者:
Cheung, Kevin M.;Yang, Kyung-Ae;Andrews, Anne M.
通讯作者:
Andrews, Anne M.
影响因子:
8.6
作者:
Cao, Huan H.;Nakatsuka, Nako;Andrews, Anne M.
通讯作者:
Andrews, Anne M.