Piezoelectric micromachined ultrasound transducer (PMUT) arrays for integrated sensing, actuation and imaging.
Piezoelectric micromachined ultrasound transducer (PMUT) arrays for integrated sensing, actuation and imaging.
复制标题
压电微机械超声传感器（PMUT）阵列，用于集成感测，启动和成像。
DOI：
10.3390/s150408020
复制
发表时间：
2015-04-03
期刊：
影响因子：
--
通讯作者：
Trolier-McKinstry S
中科院分区：
文献类型：
--
作者：
Qiu Y;Gigliotti JV;Wallace M;Griggio F;Demore CE;Cochran S;Trolier-McKinstry S
超声用于感测、致动和成像的许多应用需要与电子系统集成的小型化和低功率换能器和换能器阵列。压电微机械超声换能器（PMUT），典型地形成在硅衬底上的类压电薄膜弯曲换能器，是集成换能器阵列的潜在解决方案。本文概述了PMUT的当前发展状况，并讨论了它们对小型化和集成化器件的适用性。功能化这些设备所需的薄膜压电材料进行了讨论，其次是用于创建PMUT元件和制造施加在设备设计上的约束的微细加工技术。讨论了电互连和与片上电子器件集成的方法。电气和声学测量制造PMUT阵列与多达320个膜片元件。PMUT被示出为具有工作频率的宽带设备，该工作频率是可调谐的，通过定制的弯曲膜的横向尺寸或组成层的厚度。最后，展望了PMUT技术的未来发展，以及集成PMUT器件的潜在应用前景。
Many applications of ultrasound for sensing, actuation and imaging require miniaturized and low power transducers and transducer arrays integrated with electronic systems. Piezoelectric micromachined ultrasound transducers (PMUTs), diaphragm-like thin film flexural transducers typically formed on silicon substrates, are a potential solution for integrated transducer arrays. This paper presents an overview of the current development status of PMUTs and a discussion of their suitability for miniaturized and integrated devices. The thin film piezoelectric materials required to functionalize these devices are discussed, followed by the microfabrication techniques used to create PMUT elements and the constraints the fabrication imposes on device design. Approaches for electrical interconnection and integration with on-chip electronics are discussed. Electrical and acoustic measurements from fabricated PMUT arrays with up to 320 diaphragm elements are presented. The PMUTs are shown to be broadband devices with an operating frequency which is tunable by tailoring the lateral dimensions of the flexural membrane or the thicknesses of the constituent layers. Finally, the outlook for future development of PMUT technology and the potential applications made feasible by integrated PMUT devices are discussed.
登录
查看更多内容
影响因子：
4.6
作者：
Akasheh, F;Myers, T;Bandyopadhyay, A
通讯作者：
Bandyopadhyay, A
影响因子：
8.6
作者：
Griggio, F.;Jesse, S.;Trolier-McKinstry, S.
通讯作者：
Trolier-McKinstry, S.
DOI：
10.1109/tuffc.956
发表时间：
2008-11-01
影响因子：
3.6
作者：
Dausch, David E.;Castellucci, John B.;von Ramm, Olaf T.
通讯作者：
von Ramm, Olaf T.
DOI：
10.1109/tuffc.2005.1417268
发表时间：
2005-03-01
影响因子：
3.6
作者：
Akasheh, F;Fraser, JD;Bandyopadhyay, A
通讯作者：
Bandyopadhyay, A
影响因子：
1.7
作者：
Baborowski, J
通讯作者：
Baborowski, J