Deposition of Cr–Si–Ni–Mo films at a low sputtering current and performance of heat and humid resistance
Deposition of Cr–Si–Ni–Mo films at a low sputtering current and performance of heat and humid resistance
复制标题
低溅射电流下Cr-Si-Ni-Mo薄膜的沉积及耐热湿性能
DOI：
10.1016/j.apsusc.2013.11.034
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发表时间：
2014-01
影响因子：
6.7
通讯作者：
J.Q. Shao
中科院分区：
文献类型：
--
作者：
X.Y. Wang;C.G. Li;J.X. Ma;J.Q. Shao
在柱状氧化铝衬底上以较低的母合金靶溅射电流沉积了Cr-Si-Ni-Mo阻性薄膜。研究了溅射电流对沉积薄膜的阻值(R)和电阻温度系数(TCR)的影响。在150 mA电流下沉积2(样品1)和2.5h(样品2)的Cr-Si-Ni-Mo薄膜具有较高的热稳定性(4~20Ω未修剪)和较低的−25~2ppm/°C。寿命和高温储存实验表明，这两种薄膜具有较高的热稳定性。在2.2MΩ电阻的容差为±0.5%的情况下，样品1和样品2在两个循环的湿热实验中的电阻变化率(ΔR/R)均小于0.4%，且后者具有更好的耐热湿性能，对水的不敏感性较小。用X射线衍射仪和扫描电子显微镜研究了铬硅镍钼薄膜的微观结构与其水敏性的关系。
Cr–Si–Ni–Mo resistive films were deposited on columnar alumina substrates at a low sputtering current from mother alloy target. The effects of sputtering currents on the resistance value (R) and temperature coefficient of resistance (TCR) of deposition films were studied. Cr–Si–Ni–Mo films deposited for 2 (Sample 1) and 2.5 h (Sample 2) at a current of 150 mA have a highR(4–20 kΩ without being trimmed) and low TCR ranging from −25 to 2 ppm/°C. Life expectancy and high temperature storage experiments indicate that these two kinds of films have a high thermal stability. In the case of 2.2 MΩ resistors with a tolerance of ±0.5%, the resistance change ratio (ΔR/R) of both Samples 1 and 2 is less than 0.4% in heat and humid experiments with two cycles, and the later has a better heat and humid resistance than the former, showing a less insensitivity to water. XRD and SEM experiments were performed to explore the relations between the microstructure of Cr–Si–Ni–Mo films and their water sensitivity.
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