Comparative study of conventional vs. one-step-interconnected (OSI) monolithic CdTe modules

Comparative study of conventional vs. one-step-interconnected (OSI) monolithic CdTe modules
复制标题

传统与一步互连 (OSI) 单片 CdTe 模块的比较研究

DOI:
10.1080/14328917.2015.1117181
复制
发表时间:
2016
影响因子:
--
通讯作者:
Kartopu G
Kartopu G
中科院分区:
--
文献类型:
--
作者:
Kartopu G

文献摘要

参考文献

被引文献

相似文献

我们报告了采用两种替代路线制造5 × 7.5 cm2CdTe光伏组件器件。一种是采用传统的方法,其中激光刻划和有源层沉积步骤相互混合,另一种是通过一步互连(OSI)工艺。OSI结合了三个激光工艺和两个喷墨工艺,沉积绝缘和导电材料。这使得串联互连在所有有源层沉积后发生,减少了制造时间,资本设备成本和互连死区。它对制造碲化镉微型模块的适用性先前已被证明,但没有与传统工艺进行直接比较。介绍了传统与OSI处理的CdTe模块的结构特性和性能,并使用两种方法显示出相当的性能,OSI显示出相当大的过程简化。
We report on the fabrication of 5 × 7.5 cm2CdTe photovoltaic module devices using two alternative routes. One which uses the conventional approach where laser scribing and active layer deposition steps are inter-mixed, and the other via the one-step-interconnection (OSI) process. OSI combines three laser processes with two inkjet processes, depositing insulating and conductive materials. This allows the series interconnection to occur after the deposition of all active layers reducing fabrication time, capital equipment cost and interconnect dead zone. Its suitability for the manufacture of CdTe mini-modules has previously been demonstrated but no direct comparison was made against the conventional process. The structural properties and performance of conventional vs. OSI processed CdTe modules are presented and show comparable performance using both approaches with the OSI showing considerable process simplification.
使用激光和喷墨的一步式薄膜光伏互连工艺
DOI: 10.1109/pvsc.2013.6745181
发表时间: 2013
期刊: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
影响因子: --
作者:
M. Crozier;A. Brunton;A. Abbas;J. Bowers;P. Kamiński;J. Walls;J. Shephard
通讯作者: J. Shephard
使用定制脉冲激光器选择性去除 CdTe P1 工艺的 TCO 堆叠层
DOI: --
发表时间: 2011
期刊: 2011 37th IEEE Photovoltaic Specialists Conference
影响因子: --
作者:
M. Rekow;R. Murison;C. Dinkel;T. Panarello;S. Nikumb;W. Sampath
通讯作者: W. Sampath
DOI: 10.1016/s0254-0584(00)00316-3
发表时间: 2000-10
影响因子: 4.6
作者:
N. Romeo;A. Bosio;R. Tedeschi;V. Canevari
通讯作者: N. Romeo;A. Bosio;R. Tedeschi;V. Canevari
DOI: 10.1016/j.jcrysgro.2008.07.121
发表时间: 2008-11
影响因子: 1.8
作者:
S. Irvine;V. Barrioz;D. Lamb;Eurig W Jones;R. Rowlands-Jones
通讯作者: S. Irvine;V. Barrioz;D. Lamb;Eurig W Jones;R. Rowlands-Jones
用于 a-Si:H PV 模块制造的 SnO2:F 直接和背面刻划激光图案化的表征
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者:
D. Canteli;I. Torres;J. J. García;J. Cárabe;C. Molpeceres;J. J. Gandía
通讯作者: J. J. Gandía