Comparative study of conventional vs. one-step-interconnected (OSI) monolithic CdTe modules
Comparative study of conventional vs. one-step-interconnected (OSI) monolithic CdTe modules
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传统与一步互连 (OSI) 单片 CdTe 模块的比较研究
DOI:
10.1080/14328917.2015.1117181
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发表时间:
2016
影响因子:
--
通讯作者:
Kartopu G
中科院分区:
文献类型:
--
作者:
Kartopu G
We report on the fabrication of 5 × 7.5 cm2CdTe photovoltaic module devices using two alternative routes. One which uses the conventional approach where laser scribing and active layer deposition steps are inter-mixed, and the other via the one-step-interconnection (OSI) process. OSI combines three laser processes with two inkjet processes, depositing insulating and conductive materials. This allows the series interconnection to occur after the deposition of all active layers reducing fabrication time, capital equipment cost and interconnect dead zone. Its suitability for the manufacture of CdTe mini-modules has previously been demonstrated but no direct comparison was made against the conventional process. The structural properties and performance of conventional vs. OSI processed CdTe modules are presented and show comparable performance using both approaches with the OSI showing considerable process simplification.
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DOI:
10.1109/pvsc.2013.6745181
发表时间:
2013
期刊:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
影响因子:
--
作者:
M. Crozier;A. Brunton;A. Abbas;J. Bowers;P. Kamiński;J. Walls;J. Shephard
通讯作者:
J. Shephard
DOI:
--
发表时间:
2011
期刊:
2011 37th IEEE Photovoltaic Specialists Conference
影响因子:
--
作者:
M. Rekow;R. Murison;C. Dinkel;T. Panarello;S. Nikumb;W. Sampath
通讯作者:
W. Sampath
影响因子:
4.6
作者:
N. Romeo;A. Bosio;R. Tedeschi;V. Canevari
通讯作者:
N. Romeo;A. Bosio;R. Tedeschi;V. Canevari
影响因子:
1.8
作者:
S. Irvine;V. Barrioz;D. Lamb;Eurig W Jones;R. Rowlands-Jones
通讯作者:
S. Irvine;V. Barrioz;D. Lamb;Eurig W Jones;R. Rowlands-Jones
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
D. Canteli;I. Torres;J. J. García;J. Cárabe;C. Molpeceres;J. J. Gandía
通讯作者:
J. J. Gandía