Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films
Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films
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Cu2FeSnSe4 薄膜中硒化反应时间的结构和光学可调性
DOI：
10.1016/j.jallcom.2015.06.006
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发表时间：
2015-10
影响因子：
6.2
通讯作者：
Chu Junhao
中科院分区：
文献类型：
--
作者：
Meng Xiankuan;Deng Hongmei;Zhang Jun;Zhou Wenliang;Tao Jiahua;Sun Lin;Yue Fangyu;Yang Pingxiong;Chu Junhao
通过对溅射金属层进行硒化处理，在玻璃衬底上制备了Cu 2FeSnSe 4（CFTSe）薄膜。X射线衍射和拉曼光谱表明，所有的峰都属于CFTSe。随着反应时间的延长，Cu-Se的键长（dCu-Se）由2.463减小到2.443 μ m，然后又增大到2.450 μ m。通过改变反应时间可以实现晶粒沿着（220/204）取向生长的调谐，同时，（002）和（103）峰的强度也会随着（220/204）取向沿着晶面的形成而受到抑制。在Keating模式的基础上，结合联合收割机和dCu-Se，较好地阐明了CFTSe的A1模式，即随着反应时间的延长，A1模式先发生红移，然后又发生蓝移。此外，与dCu-Se有关的Cu d和Se p轨道的各种杂化驱动CFTSe的带隙重新分布。的带隙的值分别为1.26，1.25 - 1.14和1.23 eV的薄膜硒化使用5，10，15和20分钟，分别。这些结果有助于深入理解Cu-Fe-Sn-Se（S）系多晶材料的结构、晶向控制和带隙变化。
Cu2FeSnSe4(CFTSe) thin films were formed by selenization of sputtered metal layers on glass substrates. X-ray diffraction and Raman spectra show that all peaks are belong to the CFTSe. Moreover, the bond-length of Cu–Se (dCu-Se) decreases from 2.463 to 2.443 Å, and then increases to 2.450 Å as reaction time elevate to 20 min. The tuning of grain growth along (220/204)-orientation can be achieved by varying the reaction time, also, the intensity of (002) and (103) peaks will be restrained with the more formation of crystal surface along (220/204)-orientation. Based on the Keating's mode and combine withdCu-Se, it is well expounded the A1modes of CFTSe which exhibit a red-shift with the reaction time up to 15 min and then an opposite trend (i.e. blue-shift). Furthermore, the various hybridizations of Cu d and Se p orbital, which is connected with thedCu-Se, drive the redistribution of the band gap of CFTSe. The values of the band gap are 1.26, 1.25 1.14 and 1.23 eV for thin films selenized using 5, 10, 15 and 20 min, respectively. These results are helpful to understand the structure, crystal orientation control and band gap variations in polycrystalline Cu–Fe–Sn–Se(S) system materials deeply.
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影响因子：
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