Variation in formation and migration of self-interstitial atom clusters in electron irradiated copper with material purity and specimen preparation method
Variation in formation and migration of self-interstitial atom clusters in electron irradiated copper with material purity and specimen preparation method
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电子辐照铜中自填隙原子簇的形成和迁移随材料纯度和样品制备方法的变化
DOI：
10.1080/14786435.2022.2042610
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发表时间：
2022
影响因子：
1.6
通讯作者：
Tanioka T.
中科院分区：
文献类型：
--
作者：
Satoh Y.;Abe Y.;Ohkubo K.;Tanioka T.
采用高压电子显微镜原位观察技术，研究了300 K电子辐照下杂质原子对铜中自填隙原子团簇（SIA）形成和一维迁移的影响. 样品由五种标称纯度（9N、6N、5N、4N和3N）的铜材料使用具有不同退火条件的三种方法制备。在通过冷轧和真空退火制备的标准（STD）样品中，SIA团簇的形成和一维迁移对标称纯度的依赖很小。在非退火（NA）标本制备的高纯度材料（9N和6N），使用机械加工和电解抛光，缺陷结构被发现比STD标本粗糙。事实上，NA样本中的SIA集群的数量密度低了一个数量级以上，平均尺寸大了四倍多。此外，一维迁移的频率高出约一个数量级，距离延长两倍以上。体退火（BA）试样的结果表明，退火收到块材料有轻微的影响。所有标本的一维迁移距离的分布使用较早提出的陷阱模型。这些结果进行了讨论，假设SIA团簇被捕获的杂质原子存在于收到的材料和那些诱导退火。
In situ observation with high-voltage electron microscopy was used to survey effects of impurity atoms on the formation and one-dimensional (1D) migration of self-interstitial atom (SIA) clusters in copper under electron irradiation at 300 K. Specimens were prepared from copper materials of five nominal purities (9N, 6N, 5N, 4N, and 3N) using three methods with different annealing conditions. In standard (STD) specimens prepared through cold rolling and annealing in vacuum, SIA cluster formation and 1D migration depended little on the nominal purity. In non-annealed (NA) specimens prepared from high-purity materials (9N and 6N) using mechanical processing and electropolishing, the defect structure was found to be coarser than in STD specimens. In fact, SIA clusters in NA specimens had number density of more than an order of magnitude lower and an average size more than four times greater. Furthermore, 1D migration had the frequency of about an order of magnitude higher and distance extending more than twice longer. Results of bulk annealing (BA) specimens showed that annealing of as-received block material had minor effects. Distributions of 1D migration distance for all specimens were described using an earlier proposed trap model. These results were discussed assuming that SIA clusters are trapped by impurity atoms existing in as-received materials and those induced by annealing.
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影响因子：
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作者：
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