Screening fluorescent voltage indicators with spontaneously spiking HEK cells.

Screening fluorescent voltage indicators with spontaneously spiking HEK cells.
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筛选荧光电压指示器自发尖峰HEK细胞。

DOI:
10.1371/journal.pone.0085221
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发表时间:
2013
期刊:
影响因子:
3.7
通讯作者:
Cohen AE
Cohen AE
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Park J;Werley CA;Venkatachalam V;Kralj JM;Dib-Hajj SD;Waxman SG;Cohen AE

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改进的荧光电压指示剂的开发是神经科学中的一个关键挑战,但膜片钳表征的低通量阻碍了进展。我们引入了一种稳定表达NaV 1.3和KIR 2.1并产生自发电动作电位的非荧光HEK细胞系。这些细胞能够在标准荧光显微镜上快速、无电极地筛选电压敏感染料或荧光蛋白的速度和灵敏度。我们筛选了一个小库的突变体的古紫质3(拱)在穗HEK细胞,并确定了两个突变体具有更大的电压敏感性比以前发表的拱电压指标。
Development of improved fluorescent voltage indicators is a key challenge in neuroscience, but progress has been hampered by the low throughput of patch-clamp characterization. We introduce a line of non-fluorescent HEK cells that stably express NaV 1.3 and KIR 2.1 and generate spontaneous electrical action potentials. These cells enable rapid, electrode-free screening of speed and sensitivity of voltage sensitive dyes or fluorescent proteins on a standard fluorescence microscope. We screened a small library of mutants of archaerhodopsin 3 (Arch) in spiking HEK cells and identified two mutants with greater voltage-sensitivity than found in previously published Arch voltage indicators.
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