Threshold concentration for H blistering in defect free W

Threshold concentration for H blistering in defect free W
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无缺陷 W 中 H 起泡的阈值浓度

DOI:
10.1016/j.jnucmat.2011.09.019
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发表时间:
2011-01
影响因子:
3.1
通讯作者:
Geng, W. T.
Geng, W. T.
中科院分区:
工程技术2区
文献类型:
--
作者:
Xiao, W.;Luo, G. -N.;Geng, W. T.

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高浓度氢引起的晶格畸变被认为是氢同位素辐照下单晶W(SCW)中氢鼓泡的前兆。然而,触发金属原子键断裂所需的临界H浓度对测量提出了挑战。用密度泛函理论计算了不同氢浓度下超饱和无缺陷超临界水中空位和自填隙原子的形成能。当H:W的比例超过1:2时,空位和自发光的形成都变成放热的,这意味着将自发形成可容纳分子H2的微空隙。在超临界水氢鼓泡的初始阶段,不允许形成分子H2,也不需要分子H2。在过饱和H的情况下,空位或SIA处的自由体积由于严重的晶格畸变而被极大地涂抹,并且可以捕获比稀H情况下更多的H。
Lattice distortion induced by high concentration of H is believed to be precursor of H blistering in single crystalline W (SCW) during H isotope irradiation. However, the critical H concentration needed to trigger bond-breaking of metal atoms presents a challenge to measure. Using density functional theory, we have calculated the formation energy of a vacancy and a self-interstitial atom (SIA) in supersaturated defect-free SCW with various H concentrations. When the ratio of H:W exceeds 1:2, the formation of both vacancies and self-interstitials becomes exothermic, meaning that spontaneous formation of micro-voids which can accommodate molecular H2will occur. Molecular H2is not allowed to form, and it is not needed either at the very initial stage of H blistering in SCW. With supersaturated H, the free volume at the vacancy or SIA is greatly smeared out with severe lattice distortion and more H can be trapped than in the dilute H case.
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