Threshold concentration for H blistering in defect free W
Threshold concentration for H blistering in defect free W
复制标题
无缺陷 W 中 H 起泡的阈值浓度
DOI:
10.1016/j.jnucmat.2011.09.019
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发表时间:
2011-01
影响因子:
3.1
通讯作者:
Geng, W. T.
中科院分区:
文献类型:
--
作者:
Xiao, W.;Luo, G. -N.;Geng, W. T.
Lattice distortion induced by high concentration of H is believed to be precursor of H blistering in single crystalline W (SCW) during H isotope irradiation. However, the critical H concentration needed to trigger bond-breaking of metal atoms presents a challenge to measure. Using density functional theory, we have calculated the formation energy of a vacancy and a self-interstitial atom (SIA) in supersaturated defect-free SCW with various H concentrations. When the ratio of H:W exceeds 1:2, the formation of both vacancies and self-interstitials becomes exothermic, meaning that spontaneous formation of micro-voids which can accommodate molecular H2will occur. Molecular H2is not allowed to form, and it is not needed either at the very initial stage of H blistering in SCW. With supersaturated H, the free volume at the vacancy or SIA is greatly smeared out with severe lattice distortion and more H can be trapped than in the dilute H case.
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DOI:
10.15017/27087
发表时间:
2010-09
期刊:
Reports of Research Institute for Applied Mechanics,Kyushu University
影响因子:
--
作者:
K. Ohsawa;大澤 一人;Junya Goto;後藤 準也;Masahiro Yamakami;山上 真広;M. Yamaguchi;山口 正剛;M. Yagi
通讯作者:
K. Ohsawa;大澤 一人;Junya Goto;後藤 準也;Masahiro Yamakami;山上 真広;M. Yamaguchi;山口 正剛;M. Yagi
影响因子:
3.2
作者:
E. P. Eernisse;S. T. Picraux
通讯作者:
E. P. Eernisse;S. T. Picraux
影响因子:
3.1
作者:
J. Condon;T. Schober
通讯作者:
J. Condon;T. Schober
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J
影响因子:
3.1
作者:
Seung-Cheol Lee;Jung-Hae Choi;June-Gunn Lee
通讯作者:
Seung-Cheol Lee;Jung-Hae Choi;June-Gunn Lee