Raman investigation of layered ZrGeTe4 semiconductor
Raman investigation of layered ZrGeTe4 semiconductor
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层状 ZrGeTe4 半导体的拉曼研究
DOI：
10.1063/1.5087778
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发表时间：
2019-05
影响因子：
4
通讯作者：
Tang Dongsheng
中科院分区：
文献类型：
--
作者：
Gong Wentao;Li Liang;Gong Penglai;Zhou Yulan;Zhang Zhitao;Zhou Weichang;Wang Weike;Liu Ziran;Tang Dongsheng
本文采用拉曼光谱技术对ZrGeTe4层状半导体中的声子模式进行了系统的研究。通过密度泛函微扰理论计算，检测并确定了十个拉曼特征峰。所有的拉曼模式位移都表现出线性的温度依赖关系。ZrGeTe4拉曼模式的一阶温度系数（χ）在−0.0058 cm−1/K ~−0.01831 cm−1/K之间。此外，我们还证明了线极化激发下的强各向异性拉曼响应。在角度依赖和偏振拉曼光谱测量下，观察到的拉曼模式强度随样品旋转呈周期性变化，表明ZrGeTe4具有较高的各向异性。我们的研究结果证明了ZrGeTe4是一种高度平面内各向异性的二维半导体，表明其在纳米电子器件中的潜在应用。本文采用拉曼光谱技术对ZrGeTe4层状半导体中的声子模式进行了系统的研究。通过密度泛函微扰理论计算，检测并确定了十个拉曼特征峰。所有的拉曼模式位移都表现出线性的温度依赖关系。ZrGeTe4拉曼模式的一阶温度系数（χ）在−0.0058 cm−1/K ~−0.01831 cm−1/K之间。此外，我们还证明了线极化激发下的强各向异性拉曼响应。在角度依赖和偏振拉曼光谱测量下，观察到的拉曼模式强度随样品旋转呈周期性变化，表明ZrGeTe4具有较高的各向异性。我们的研究结果证明了ZrGeTe4是一种高度平面内各向异性的二维半导体，表明其在纳米电子器件中的潜在应用。
This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.
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