Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built-In Electric Field Manipulated by Unintentional Doping.
Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built-In Electric Field Manipulated by Unintentional Doping.
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提高钙钛矿光电二极管性能的通用策略：通过无意掺杂操纵界面内置电场
DOI：
10.1002/advs.202101729
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发表时间：
2021-09
期刊：
影响因子：
--
通讯作者：
Kyaw AKK
中科院分区：
文献类型：
--
作者：
Wu D;Li W;Liu H;Xiao X;Shi K;Tang H;Shan C;Wang K;Sun XW;Kyaw AKK
有机-无机卤化物钙钛矿已经表现出显著的光检测潜力，其性能与市售光电探测器相当。在这项研究中，提出了一种适用于倒置和规则结构的通用设计准则，用于通过界面内置电场（E）实现高效载流子分离和传输的高性能钙钛矿光电二极管。在远离入射光的活性层和电荷传输层之间的界面处产生的界面E对于有效的电荷载流子收集是关键的。界面E可以通过钙钛矿的无意掺杂来调节，钙钛矿的掺杂类型和密度可以通过后退火时间和温度容易地控制。采用所提出的设计准则，倒置和常规钙钛矿光电二极管的外量子效率分别为83.51%和76.5%，响应度分别为0.37和0.34 A W−1。在自供电模式下，暗电流达到7.95 × 10−11和1.47 × 10−8 A cm−2，分别为倒置和规则结构提供7.34 × 1013和4.96 × 1012 Jones的高探测率，以及至少1600 h的长期稳定性。这种优化策略与现有材料和器件结构兼容，因此在钙钛矿基光电器件中具有巨大的潜在应用。通过界面内置电场（E），提出了适用于倒置和规则结构的高性能钙钛矿光电二极管的一般设计准则。界面E可以通过钙钛矿的无意掺杂来调节，钙钛矿的掺杂类型和密度可以通过后退火时间和温度容易地控制。
Organic–inorganic halide perovskites have demonstrated significant light detection potential, with a performance comparable to that of commercially available photodetectors. In this study, a general design guideline, which is applicable to both inverted and regular structures, is proposed for high‐performance perovskite photodiodes through an interfacial built‐in electric field (E) for efficient carrier separation and transport. The interfacial E generated at the interface between the active and charge transport layers far from the incident light is critical for effective charge carrier collection. The interfacial E can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post‐annealing time and temperature. Employing the proposed design guideline, the inverted and regular perovskite photodiodes exhibit the external quantum efficiency of 83.51% and 76.5% and responsivities of 0.37 and 0.34 A W−1, respectively. In the self‐powered mode, the dark currents reach 7.95 × 10−11 and 1.47 × 10−8 A cm−2, providing high detectivities of 7.34 × 1013 and 4.96 × 1012 Jones, for inverted and regular structures, respectively, and a long‐term stability of at least 1600 h. This optimization strategy is compatible with existing materials and device structures and hence leads to substantial potential applications in perovskite‐based optoelectronic devices. A general design guideline, which is applicable to both inverted and regular structures, is proposed for high‐performance perovskite photodiodes through an interfacial built‐in electric field (E). The interfacial E can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post‐annealing time and temperature.
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