High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
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DOI：
10.1021/cm4035837
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发表时间：
2014-01-28
影响因子：
8.6
通讯作者：
Sirringhaus, Henning
中科院分区：
文献类型：
--
作者：
Banger, Kulbinder K.;Peterson, Rebecca L.;Mori, Kiyotaka;Yamashita, Yoshihisa;Leedham, Timothy;Sirringhaus, Henning
非晶混合金属氧化物正在成为薄膜晶体管（TFT）应用的高性能半导体，其中铟镓锌氧化物InGaZnO（IGZO）是研究最广泛且性能最好的系统之一。在这里，我们研究碱土金属（钡或锶）掺杂的InBa（Sr）ZnO作为替代，半导体沟道层，并比较其性能的电应力稳定性与IGZO。在由金属醇盐前体通过溶液处理并退火至450 °C制备的膜中，我们实现了高达26 cm 2 V-1 s-1的高场效应电子迁移率。我们表明，有可能在低工艺温度下（225-200 °C，产生高达4.4 cm 2 V-1 s-1的迁移率）的溶液处理这些材料，并证明了一个简单的“按需喷墨”的这些材料的过程中，利用烷基金属前体的醇解反应，以否定需要复杂的合成和纯化协议。电偏置应力的测量，可以作为一个因素的TFT器件的性能稳定性显示Sr和Ba掺杂的半导体表现出增强的电稳定性和降低的阈值电压漂移相比，IGZO的工艺温度和制备方法无关。这种稳定性的增强可以归因于与镓相比钡和锶的更高的氧化吉布斯能。
Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.
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