Spray pyrolysis deposited CuSbS2 absorber layers for thin-film solar cells

Spray pyrolysis deposited CuSbS2 absorber layers for thin-film solar cells
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用于薄膜太阳能电池的喷雾热解沉积 CuSbS2 吸收层

DOI:
10.1007/s10854-019-02531-2
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发表时间:
2019-11
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
Zhou Ru
Zhou Ru
中科院分区:
其他
文献类型:
--
作者:
Wan Lei;Guo Xu;Fang Yingcui;Mao Xiaoli;Guo Huier;Xu Jinzhang;Zhou Ru

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以金属氯化物水溶液为原料,采用喷雾热解法制备了CuSbS2薄膜。系统地研究了CuSbS_2的结构、化学、光学和电学性质以及不同硫化温度对CuSb_2薄膜的影响。我们使用了两步硫化的方法。在较低温度下的第一步是鼓励沉积的薄膜与硫蒸气完全饱和。在较高温度下的第二步是促进CuSbS_2的形成和结晶。第二步的硫化温度对形成器件级CuSbS_2薄膜非常重要。随着硫化温度的升高,Sb2S3等杂质减少,CuSbS2的结晶度提高。直到400℃时,杂质消失,得到了相纯、结晶度良好的CuSbS2薄膜。当硫化温度高于400℃时,CuSbS2逐渐转变为Cu3SbS4。在400℃下硫化的CuSbS2薄膜为p型,最佳禁带宽度为1.53 eV,在可见光波段的吸收系数大于105 cm−1。首次研究了CuSbS_2的电导率与温度的关系。在高于140K的测量温度下,CuSbS2薄膜的电导率主要由能带传导和最近邻跳跃(NNH)控制。然而,在低于140K的温度下,电导主要受可变范围跳跃(VRH)的影响。最后,基于喷涂CuSbS_2吸收体层制备了最大光电转换效率为0.34%的薄膜太阳电池。
CuSbS2 thin films were fabricated by spray pyrolysis from metal chloride aqueous solutions, followed by a post-deposition sulfurization step. The structural, chemical, optical and electrical properties of CuSbS2 and the effect of various sulfurization temperatures on CuSbS2 thin film have been systematically studied. We used a two-step sulfurization method. Step 1 at lower temperature was to encourage complete saturation of the as-deposited film with sulfur vapor. And step 2 at higher temperature was to promote the formation and crystallization of CuSbS2. The sulfurization temperature of step 2 is very important for the formation of device-grade CuSbS2 films. With the increase in sulfurization temperature, impurities such as Sb2S3 decreased and the crystallinity of CuSbS2 improved. Until 400 °C, impurities disappeared and phase-pure well-crystallinity CuSbS2 thin films were obtained. When the sulfurization temperature is higher than 400 °C, CuSbS2 gradually changes to Cu3SbS4. The CuSbS2 films sulfurized at 400 °C with optimum band gap of 1.53 eV are p type, and absorption coefficient is larger than 105 cm−1 in the visible light wavelength range. The temperature dependence of electrical conductivity of CuSbS2 has been studied for the first time. At measurement temperatures higher than 140 K the electrical conductivity of the CuSbS2 film is dominated by band conduction and nearest neighbor hopping (NNH). However, at temperatures below 140 K the conduction is predominantly affected by variable range hopping (VRH). Finally, thin-film solar cells based on the sprayed CuSbS2 absorber layers with a maximum photoelectric conversion efficiency of 0.34% have been fabricated.
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