Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect

Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect
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具有发光耦合效应的硅多结太阳能电池上晶圆键合 III-V 族的温度依赖性

DOI:
10.1117/1.jpe.9.015503
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发表时间:
2019
影响因子:
1.7
通讯作者:
Okada Yoshitaka
Okada Yoshitaka
中科院分区:
工程技术4区
文献类型:
--
作者:
Yu Jeco Bernice Mae F.;Veinberg-Vidal Elias;Vauche Laura;Ahsan Nazmul;Okada Yoshitaka

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多结太阳能电池(MJSC)中的强发光耦合(LC)效应允许其子电池之间更好的电流平衡。研究了具有LC效应的硅基III-V族MJSC的温度特性。在实验上,这是探索通过光电流密度-电压(J-V)特性测量,外量子效率测量,和激光束诱导电流映射的InGaP/AlGaAs//Si三结太阳能电池在不同的电池温度。测量结果进行了分析,使用准二维电光预测模型的LC电流生产和带隙的各种半导体的温度依赖性模型。结果表明,在较低的温度下,在有限的Si底电池中的LC电流产生导致较大的绝对LC量子效率差。在15°C下,计算的绝对LC量子效率差为0.17%,这表明如果使垂直LC电流均匀,则潜在的电流产生改善。
Strong luminescent coupling (LC) effect in a multijunction solar cell (MJSC) allows better current balance among its subcells. The temperature dependence of wafer-bonded III-V on silicon (Si) MJSCs with LC effect was investigated. Experimentally, this was explored through light current density–voltage (J–V) characteristic measurements, external quantum efficiency measurements, and laser beam-induced current mapping of InGaP/AlGaAs//Si triple junction solar cells at different cell temperatures. Measurement results were analyzed using a quasi-two-dimensional electro-optical prediction model for LC current production and bandgap temperature dependence models of various semiconductors. It was revealed that at lower temperatures, LC current production in the limiting Si bottom cell resulted in a larger absolute LC quantum efficiency difference. At 15°C, the absolute LC quantum efficiency difference calculated was 0.17%, which indicates potential current production improvement if vertical LC current is made uniform.
InGaP/GaAs/Ge三结太阳能电池中光学非均匀发光耦合效应对限制电池转换效率的影响
DOI: 10.1117/1.jpe.7.035501
发表时间: 2017
影响因子: 1.7
作者:
Yu Jeco Bernice Mae F.;Sogabe Tomah;Tamaki Ryo;Ahsan Nazmul;Okada Yoshitaka
通讯作者: Okada Yoshitaka
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