Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage
Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage
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硼掺杂bcc-W薄膜：通过调节基底偏压实现优异的机械性能和摩擦学性能
DOI：
10.1016/j.apsusc.2017.06.185
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发表时间：
2017-11
影响因子：
6.7
通讯作者：
Mao Wen
中科院分区：
文献类型：
--
作者：
Lina Yang;Kan Zhang;Yi Zeng;Xin Wang;Suxuan Du;Chuanying Tao;Ping Ren;Xiaoqiang Cui;Mao Wen
采用磁控共溅射纯W和B靶在Si（100）衬底上制备了掺硼bcc-W（WBx，x= B/W）薄膜。结果表明，当衬底偏置电压（V B）的绝对值从浮置电压增加到240 V时，x值从0.18单调减小到0.04，并伴随着从四元γ-W 2 B和体心立方α-W（B）相的混合相（− V B ≤ 60 V）到α-W（B）单相（− V B>60 V）的相变。硬度随Vb的增加先增加后下降，在-Vb=60 V时硬度最大，为30.8 GPa，远高于纯W和W2 B的理论值。在混合相组织中，B引起的晶界强化、Hall-Petch效应和固溶强化是主要的强化机制。令人惊讶的是，在-Vb=120 V下生长的薄膜仍然具有比纯W高两倍的硬度，其中出乎意料地低（6.7 at.%）B浓度和只有单一的α-W（B）相可以被识别。在这种情况下，Hall-Petch效应和固溶强化都起作用。此外，α-W（B）相薄膜的摩擦系数最低可达0.18，与已报道的富B过渡金属硼化物TiB 2、Cr B和CrB 2的摩擦系数相当。
Boron dopedbcc-W (WBx,x= B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value ofxmonotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (−Vb≤ 60 V) to α-W(B) single phase (−Vb>60 V). Hardness, depending onVb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at −Vb=60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at −Vb=120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.
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DOI：
10.1002/pssa.201228828
发表时间：
2013-06-01
影响因子：
2
作者：
Jiang, Chunlei;Pei, Zhiliang;Sun, Chao
通讯作者：
Sun, Chao
影响因子：
6.2
作者：
P. Stempfle;Olivier Pantalé;Toufik Djilali;R. K. Njiwa;X. Bourrat;J. Takadoum
通讯作者：
P. Stempfle;Olivier Pantalé;Toufik Djilali;R. K. Njiwa;X. Bourrat;J. Takadoum
WB4 中硬度的起源及其对 ReB4、TaB4、MoB4、TcB4 和 OsB4 的影响
影响因子：
4
作者：
Li, Yinwei;Wang, Mei;Cui, Tian;Ma, Yanming;Zou, Guangtian
通讯作者：
Zou, Guangtian
影响因子：
5.4
作者：
Wen, M.;Meng, Q. N.;Yu, W. X.;Zheng, W. T.;Mao, S. X.;Hua, M. J.
通讯作者：
Hua, M. J.
影响因子：
5.2
作者：
J. Chrzanowska;Ł. Kurpaska;M. Giżyński;J. Hoffman;Z. Szymański;T. Mościcki
通讯作者：
J. Chrzanowska;Ł. Kurpaska;M. Giżyński;J. Hoffman;Z. Szymański;T. Mościcki