Growth, stress and hardness of reactively sputtered tungsten nitride thin films
Growth, stress and hardness of reactively sputtered tungsten nitride thin films
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反应溅射氮化钨薄膜的生长、应力和硬度
DOI：
10.1016/j.surfcoat.2010.08.082
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发表时间：
2010-12
影响因子：
5.4
通讯作者：
Hua, M. J.
中科院分区：
文献类型：
--
作者：
Wen, M.;Meng, Q. N.;Yu, W. X.;Zheng, W. T.;Mao, S. X.;Hua, M. J.
采用直流反应磁控溅射法在Si（100）衬底上沉积了氮化钨（WNx）薄膜。通过X射线光电子能谱、X射线衍射、高分辨透射电子显微镜和纳米压痕测试，研究了氮气流量（FN 2）和衬底偏压（Vb）对薄膜组成、相结构和力学性能的影响。相结构的演变与薄膜中的N浓度密切相关。当Vb=− 40 V时，随着FN 2的增加，薄膜中N/W原子比逐渐增加，并伴随着从立方β-W到六方WN的相变，通过面心立方（fcc）-W2 N。在FN 2 = 15 sccm时，随着Vb绝对值的增加，N/W原子比逐渐减小，导致从fcc-W2 N转变为立方相β-W（N），形成fcc-W2 N +β-W（N）的混合物。此外，注入氮的增加导致压应力随着FN 2的增加而增加。相反，虽然随着Vb的绝对值从80 V增加到160 V，N/W原子比减小，但由离子轰击能量增加引起的缺陷的增加主导了压应力的增加。当Vb=− 120 V时，薄膜的硬度达到最大值38.9GPa，形成fcc-W2 N +β-W（N）混合结构。
Tungsten nitride (WNx) thin films were deposited on Si(100) substrates using direct current reactive magnetron sputtering in discharging a mixture of N2and Ar gas. The effects of nitrogen flow rate (FN2) and substrate bias voltage (Vb) on the composition, phase structure, and mechanical properties for the obtained films were evaluated by means of X-ray photoelectron spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy and nanoindentation. The evolution of phase structure is found closely correlated to N concentration in the films. When Vb=−40V, with increasing FN2, the N/W atomic ratio gradually increases in the film, accompanied by a phase transition from cubic β-W to hexagonal WN through face centered-cubic (fcc)-W2N. At FN2=15sccm, the N/W atomic ratio gradually decreases with increasing the absolute value of Vb, resulting in a transition from fcc-W2N to cubic β-W(N) through a mixture of fcc-W2N+β-W(N). In addition, the increase in implanted nitrogen causes the increase in the compressive stress with increasing FN2. In contrast, although with increasing the absolute value of Vbfrom 80 to 160V the N/W atomic ratio decreases, the increase of the defects caused by increasing ion bombarding energy, dominates the increase of the compressive stress. Furthermore, the maximum hardness value for the films arrives at 38.9GPa, which is obtained at Vb=−120V when fcc-W2N+β-W(N) mixed structure is formed.
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DOI：
10.1103/physreve.61.1904
发表时间：
2000-02
期刊：
Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics
影响因子：
--
作者：
Wang;Cohen;Ruzic;Goeckner
通讯作者：
Wang;Cohen;Ruzic;Goeckner
溅射氮化钨薄膜的表征及其在化学镀铜中的应用
影响因子：
2.3
作者：
Shingubara, Shoso;Liu, Zonghuai;Wang, Zenglin;Yang, Zupei
通讯作者：
Yang, Zupei
DOI：
10.1002/pssb.200844077
发表时间：
2008-08
期刊：
physica status solidi (b)
影响因子：
--
作者：
D. V. Suetin;I. Shein;A. Ivanovskii
通讯作者：
D. V. Suetin;I. Shein;A. Ivanovskii
DOI：
10.1116/1.580888
发表时间：
1997-11
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
H. Wulff;C. Eggs
通讯作者：
H. Wulff;C. Eggs
DOI：
10.1116/1.1498278
发表时间：
2002-09-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
Baker, CC;Shah, SI
通讯作者：
Shah, SI