Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures
Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures
复制标题
不同温度下电子辐照的铜掺杂硅晶体的深能级中心
DOI：
10.1002/pssc.201600267
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
J. Weber
中科院分区：
文献类型：
--
作者：
N. Yarykin;J. Weber
用空间电荷谱方法研究了高能粒子轰击对铜污染硅片深能级谱的影响。p型FZ-Si晶片在645-750 °C的温度范围内用铜掺杂，然后在室温下用1015 cm − 2通量的5 MeV电子辐照。在未辐照的Cu掺杂晶片中仅检测到显著浓度的移动的Cu物种和CuPL中心。发现辐照样品的性质定性地取决于铜的内扩散温度Tdiff。当Tdiff> 700 °C时，辐照部分降低了Cu浓度并引入了额外的CuPL中心，而没有检测到标准辐照缺陷。如果Tdiffs低于10700 ℃，则照射完全除去移动的Cuisspecies。相反，标准辐射缺陷及其与铜的复合物出现在深能级光谱中。导出并讨论了辐照过程中缺陷反应的模型，Cu污染后再辐照的硅的DLTS谱定性地依赖于Cu的内扩散温度。
The effect of bombardment with energetic particles on the deep‐level spectrum of copper‐contaminated silicon wafers is studied by space charge spectroscopy methods. The p‐type FZ‐Si wafers were doped with copper in the temperature range of 645–750 °C and then irradiated with the 1015cm−2fluence of 5 MeV electrons at room temperature. Only the mobile Cuispecies and the CuPLcenters are detected in significant concentrations in the non‐irradiated Cu‐doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in‐diffusion temperatureTdiff. ForTdiff> 700 °C, the irradiation partially reduces the Cuiconcentration and introduces additional CuPLcenters while no standard radiation defects are detected. IfTdiffwas below ∼700 °C, the irradiation totally removes the mobile Cuispecies. Instead, the standard radiation defects and their complexes with copper appear in the deep‐level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed.DLTS spectrum of the Cu‐contaminated and then irradiated silicon qualitatively depends on the copper in‐diffusion temperature.
Cu相关发光中心与硅深能级之间的相关性
影响因子：
3.2
作者：
H. Erzgräber;K. Schmalz
通讯作者：
K. Schmalz
硅中的空位：低温和高温下相同的扩散特性
影响因子：
3.2
作者：
G. D. Watkins
通讯作者：
G. D. Watkins