Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
复制标题
铝注入 4H-SiC 的表面形貌和离子活化研究
DOI：
10.1007/s11431-012-4827-4
复制
发表时间：
2012-04
影响因子：
4.6
通讯作者：
Tang XiaoYan
中科院分区：
文献类型：
--
作者：
Song QingWen;Zhang YuMing;Zhang YiMen;Tang XiaoYan
Multiple-energy aluminium (Al+) implantation into 4H-SiC (0001) epilayer and activation anneal with a graphite encapsulation layer were investigated in this paper. Measurements showed that the implanted Al+box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 min annealing at 1600°C using a horizontal chemical vapor deposition (CVD) reactor. The step bunching effect associated with the high temperature post implantation activation annealing (PIA) process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness (RMS) value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication.
登录
查看更多内容
影响因子：
3.2
作者：
Y. Negoro;T. Kimoto;H. Matsunami;F. Schmid;G. Pensl
通讯作者：
Y. Negoro;T. Kimoto;H. Matsunami;F. Schmid;G. Pensl
影响因子：
3.1
作者：
S. Dhar;S. Ryu;A. Agarwal
通讯作者：
S. Dhar;S. Ryu;A. Agarwal
影响因子：
2.1
作者：
Capano, MA;Ryu, S;Walker, DE
通讯作者：
Walker, DE
影响因子：
3
作者：
F. Zhao;Mohammad M. Islam;Chih-Fang Huang
通讯作者：
F. Zhao;Mohammad M. Islam;Chih-Fang Huang
影响因子：
3.2
作者：
Danno, Katsunori;Kimoto, Tsunenobu
通讯作者：
Kimoto, Tsunenobu