How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics
How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics
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碳空位如何影响钻石中 IV 族色心的特性：热力学和动力学研究
DOI：
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发表时间：
2019
影响因子：
3.2
通讯作者：
S. L. Richardson
中科院分区：
文献类型：
--
作者：
R. K. Defo;E. Kaxiras;S. L. Richardson
最近，人们对使用周期表中的第IV族元素来制造和研究金刚石中的X-V色心产生了很大的兴趣，其中X = Si，Ge，Sn或Pb，V是碳空位。这些IV族色心具有许多有趣的自旋和光学性质，这可能使它们成为量子计算和量子信息处理中重要应用的比N V −中心更好的候选者。不幸的是，在金刚石中产生这些X V色心所需的相同离子注入过程也必然会产生许多碳空位（V C），这些碳空位可以与这些色心（V C − X V）形成复合物，从而显著影响孤立的X V色心的性质。这项工作的主要重点是使用密度泛函理论来研究这些V C − X V复合物形成的热力学和动力学，并提出阻止这一过程的实验方法，例如通过化学掺杂或施加外部电偏压来改变宿主金刚石材料的费米能级。我们还讨论了如何简单的存在下，许多VC可以产生负面影响的自旋相干时间（T2）的IV族色心通过声学phononons.Recently的存在下，已经有很大的兴趣在使用IV族元素从周期表中制造和研究金刚石中的X V色心，其中X = Si，Ge，Sn，或Pb和V是一个碳空位。这些IV族色心具有许多有趣的自旋和光学性质，这可能使它们成为量子计算和量子信息处理中重要应用的比N V −中心更好的候选者。不幸的是，在金刚石中产生这些X V色心所需的相同离子注入过程也必然会产生许多碳空位（V C），这些碳空位可以与这些色心（V C − X V）形成复合物，从而显著影响孤立的X V色心的性质。这项工作的主要重点是使用密度泛函理论来研究这些V C − X V复合物形成的热力学和动力学，并提出实验方法来阻止这一过程，例如改变费米能级。
Recently, there has been much interest in using Group IV elements from the periodic table to fabricate and study X V color centers in diamond, where X = Si, Ge, Sn, or Pb and V is a carbon vacancy. These Group IV color centers have a number of interesting spin and optical properties, which could potentially make them better candidates than N V − centers for important applications in quantum computing and quantum information processing. Unfortunately, the very same ion implantation process that is required to create these X V color centers in diamond necessarily also produces many carbon vacancies ( V C), which can form complexes with these color centers ( V C −X V) that can dramatically affect the properties of the isolated X V color centers. The main focus of this work is to use density-functional theory to study the thermodynamics and kinetics of the formation of these V C −X V complexes and to suggest experimental ways to impede this process such as varying the Fermi level of the host diamond material through chemical doping or applying an external electrical bias. We also include a discussion of how the simple presence of many V C can negatively impact the spin coherence times ( T 2) of Group IV color centers through the presence of acoustic phonons.Recently, there has been much interest in using Group IV elements from the periodic table to fabricate and study X V color centers in diamond, where X = Si, Ge, Sn, or Pb and V is a carbon vacancy. These Group IV color centers have a number of interesting spin and optical properties, which could potentially make them better candidates than N V − centers for important applications in quantum computing and quantum information processing. Unfortunately, the very same ion implantation process that is required to create these X V color centers in diamond necessarily also produces many carbon vacancies ( V C), which can form complexes with these color centers ( V C −X V) that can dramatically affect the properties of the isolated X V color centers. The main focus of this work is to use density-functional theory to study the thermodynamics and kinetics of the formation of these V C −X V complexes and to suggest experimental ways to impede this process such as varying the Fermi level of the...
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影响因子：
4.6
作者：
Iwasaki T;Ishibashi F;Miyamoto Y;Doi Y;Kobayashi S;Miyazaki T;Tahara K;Jahnke KD;Rogers LJ;Naydenov B;Jelezko F;Yamasaki S;Nagamachi S;Inubushi T;Mizuochi N;Hatano M
通讯作者：
Hatano M
影响因子：
44.1
作者：
Freysoldt, Christoph;Grabowski, Blazej;Van de Walle, Chris G.
通讯作者：
Van de Walle, Chris G.
影响因子：
16.6
作者：
Fávaro de Oliveira F;Antonov D;Wang Y;Neumann P;Momenzadeh SA;Häußermann T;Pasquarelli A;Denisenko A;Wrachtrup J
通讯作者：
Wrachtrup J
影响因子：
3.7
作者：
Alison E. Rugar;C. Dory;Shuo Sun;J. Vuvckovi'c
通讯作者：
Alison E. Rugar;C. Dory;Shuo Sun;J. Vuvckovi'c
影响因子：
56.9
作者：
Rose, Brendon C.;Huang, Ding;de Leon, Nathalie P.
通讯作者：
de Leon, Nathalie P.