Role of Surface Hydrogen Bonds in Determining the Friction Behaviors of Hydrogenated Diamond-like Carbon Films
Role of Surface Hydrogen Bonds in Determining the Friction Behaviors of Hydrogenated Diamond-like Carbon Films
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表面氢键在确定氢化类金刚石碳膜摩擦行为中的作用
DOI：
10.1088/0256-307x/29/5/056201
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发表时间：
2012-04
影响因子：
3.5
通讯作者：
Zhang Jun-Yan
中科院分区：
文献类型：
--
作者：
Wang Cheng-Bing;Shi Jing;Geng Zhong-Rong;Zhang Jun-Yan
在球盘式摩擦磨损试验机上研究了氢化类金刚石薄膜在干燥氮气和干燥真空中的摩擦行为。结果表明，H-DLC膜的摩擦行为对试验环境非常敏感，在干燥N2中摩擦系数很低，仅为0.016;在惰性气体中，摩擦系数在干燥真空中增大到0.063左右。结合试验条件、摩擦结果、SEM和XPS分析，得出结论：氢化类金刚石膜的摩擦行为与其表面氢有关，并取决于摩擦界面上转移膜/H-DLC膜之间是否形成氢键。提出了一个氢致氢键模型来解释氢化DLC膜在不同环境中的摩擦行为。
Friction behaviors of hydrogenated diamond-like carbon (H-DLC) films are investigated on a ball-on-disk type tribometer in dry N2 and dry vacuum. The result shows that the friction behaviors of the H-DLC films are very sensitive to the testing environment, the H-DLC films exhibit a very low friction coefficient of 0.016 in dry N2, and similarly in an inert gas the friction coefficient increases to about 0.063 in dry vacuum. Combining the testing conditions, friction results, SEM and XPS investigation, it is concluded that the friction behaviors of the hydrogenated DLC films are associated with surface hydrogen of the H-DLC films and are dictated by whether or not hydrogen bonds are formed between the transfer films/H-DLC films at the sliding interface. A hydrogen-induced hydrogen bond model is proposed to interpret the friction behaviors of hydrogenated DLC films in different environments.
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影响因子：
15
作者：
Gao, GT;Mikulski, PT;Harrison, JA
通讯作者：
Harrison, JA
影响因子：
4.1
作者：
Wei Zhang;A. Tanaka;K. Wazumi;Y. Koga
通讯作者：
Wei Zhang;A. Tanaka;K. Wazumi;Y. Koga
DOI：
10.1088/0022-3727/38/1/011
发表时间：
2005-01
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Hongxuan Li;T. Xu;Chengbing Wang;Jianmin Chen;Hui-di Zhou;Huiwen Liu
通讯作者：
Hongxuan Li;T. Xu;Chengbing Wang;Jianmin Chen;Hui-di Zhou;Huiwen Liu
影响因子：
5.4
作者：
J. Jiang;Sam Zhang;R. Arnell
通讯作者：
J. Jiang;Sam Zhang;R. Arnell
影响因子：
5.4
作者：
Erdemir, A;Eryilmaz, OL;Fenske, GR
通讯作者：
Fenske, GR