"Seamless" graphene interconnects for the prospect of all-carbon spin-polarized field-effect transistors.
"Seamless" graphene interconnects for the prospect of all-carbon spin-polarized field-effect transistors.
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DOI:
10.1021/jp1096234
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发表时间:
2011-01-24
影响因子:
3.7
通讯作者:
Kioussis, Nicholas
中科院分区:
文献类型:
--
作者:
Agapito, Luis A.;Kioussis, Nicholas
Magnetism in graphene nanofragments arises from the spin polarization of the edge-states; consequently, as the material inexorably shrinks, magnetism will become a dominant feature whereas the bulk carrier mobility will be less relevant. We have carried out an ab initio study of the role of graphene-ultra-nanofragment magnetism on electronic transport. We present, as a proof-of-concept, a nanoscopic spin-polarized field-effect transistor (FET) with the channel and metallic contacts carved from a single graphene sheet. We demonstrate the selective tuning of conductance through electric–field control of the magnetic, rather than the charge, degrees of freedom of the channel, the latter typically employed in microscopic graphene FETs.
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