Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction.
Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction.
复制标题
DOI：
10.1038/s41598-017-11187-z
复制
发表时间：
2017-09-07
影响因子：
4.6
通讯作者：
Trager-Cowan C
中科院分区：
文献类型：
--
作者：
Naresh-Kumar G;Vilalta-Clemente A;Jussila H;Winkelmann A;Nolze G;Vespucci S;Nagarajan S;Wilkinson AJ;Trager-Cowan C
需要在纳米尺度上快速使用、非破坏性和结构确定的先进结构表征技术，特别是对于扩展缺陷及其对材料性能的影响的详细了解。我们在扫描电子显微镜中应用电子背散射衍射（EBSD）技术，对生长在不同（001）Si衬底上的GaP薄膜中的反相畴（APDs）进行了非破坏性表征和量化。我们将实验获得的EBSD模式中观察到的不对称强度分布联系起来，并将其与动态电子衍射模拟进行比较，从而能够对apd进行成像和量化。此外，还使用基于自动互相关的方法绘制了平均角误差图。在与[110]有4°切割的基质上生长的样品没有显示出任何apd，而在完全定向的基质上生长的样品含有apd。在我们的工作中描述的程序可以用于表征具有非中心对称点群的其他材料系统的广泛范围。
Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001) Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs. Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups.
登录
查看更多内容
影响因子：
3.2
作者：
Beyer, A.;Ohlmann, J.;Volz, K.
通讯作者：
Volz, K.
影响因子：
3.2
作者：
Beyer, Andreas;Nemeth, Igor;Volz, Kerstin
通讯作者：
Volz, Kerstin
影响因子：
1.5
作者：
Nolze, G.;Winkelmann, A.
通讯作者：
Winkelmann, A.
影响因子：
4
作者：
Khazaka, Rami;Grundmann, Marius;Michaud, Jean-Francois
通讯作者：
Michaud, Jean-Francois
影响因子：
3.2
作者：
MARCINKOWSKI, MJ;BROWN, N
通讯作者：
BROWN, N