Sequential class switching is required for the generation of high affinity IgE antibodies.

Sequential class switching is required for the generation of high affinity IgE antibodies.
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DOI:
10.1084/jem.20111941
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发表时间:
2012-02-13
期刊:
The Journal of experimental medicine
影响因子:
--
通讯作者:
Lafaille JJ
Lafaille JJ
中科院分区:
其他
文献类型:
--
作者:
Xiong H;Dolpady J;Wabl M;Curotto de Lafaille MA;Lafaille JJ

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过敏诱导高亲和力IgE的产生需要顺序的类别转换。对它们的抗原具有高亲和力的IgE抗体可以在低浓度下通过痕量抗原稳定地交联,而具有低亲和力的IgE抗体与它们的抗原的结合较弱。在这项研究中,我们发现有两种不同的途径产生高和低亲和力IgE。高亲和力IgE通过顺序类别转换(μ→γ→ε)产生,其中中间IgG阶段是IgE应答亲和力成熟所必需的,其中IgE从IgG1阶段继承体细胞超突变和高亲和力。相比之下,低亲和力IgE通过直接类别转换(μ→ε)产生,并且突变少得多。IgG1产生缺陷的小鼠不能产生高亲和力IgE,即使在重复免疫后也是如此。我们证明,少量的高亲和力IgE可引起过敏反应,是致病性的。低亲和力IgE与高亲和力IgE竞争结合Fcε受体并预防过敏反应,因此是有益的。
Generation of anaphylaxis-inducing high affinity IgE requires sequential class switching. IgE antibodies with high affinity for their antigens can be stably cross-linked at low concentrations by trace amounts of antigen, whereas IgE antibodies with low affinity bind their antigens weakly. In this study, we find that there are two distinct pathways to generate high and low affinity IgE. High affinity IgE is generated through sequential class switching (μ→γ→ε) in which an intermediary IgG phase is necessary for the affinity maturation of the IgE response, where the IgE inherits somatic hypermutations and high affinity from the IgG1 phase. In contrast, low affinity IgE is generated through direct class switching (μ→ε) and is much less mutated. Mice deficient in IgG1 production cannot produce high affinity IgE, even after repeated immunizations. We demonstrate that a small amount of high affinity IgE can cause anaphylaxis and is pathogenic. Low affinity IgE competes with high affinity IgE for binding to Fcε receptors and prevents anaphylaxis and is thus beneficial.
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