Energy-adaptive resistive switching with controllable thresholds in insulator-metal transition.

Energy-adaptive resistive switching with controllable thresholds in insulator-metal transition.
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DOI:
10.1039/d2ra06866d
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发表时间:
2022-12-12
期刊:
影响因子:
3.9
通讯作者:
--
中科院分区:
化学3区
文献类型:
--
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电阻开关为电子神经网络和神经形态系统提供了一个重要的途径。受神经递质分泌的主动调节的启发,实现具有自适应特性的电子元件对于在节能集成电路中匹配焦耳加热或复杂的热环境至关重要。在这里,我们提出了能量自适应电阻开关通过一个可控的绝缘体-金属过渡。记忆相关开关的设计和实现通过操纵二氧化钒的电导转变。在加热过程中,开关功率动态下降约58%。此外,阈值可以通过调节这种基于晶闸管的电阻切换中的绝缘体-金属转变过程来控制,然后在宽范围的操作温度下执行。我们相信,这种功率自适应开关有利于智能存储设备和低能耗的神经形态电子产品。通过可控绝缘体-金属转变具有主动响应和自调节功能的自适应能量缩放电阻开关在节能设备中显示出希望。
Resistive switching has provided a significant avenue for electronic neural networks and neuromorphic systems. Inspired by the active regulation of neurotransmitter secretion, realizing electronic elements with self-adaptive characteristics is vital for matching Joule heating or sophisticated thermal environments in energy-efficient integrated circuits. Here we present energy-adaptive resistive switching via a controllable insulator–metal transition. Memory-related switching is designed and implemented by manipulating conductance transitions in vanadium dioxide. The switching power decreases dynamically by about 58% during the heating process. Furthermore, the thresholds can be controlled by adjusting the insulator–metal transition processes in such nanowire-based resistive switching, and then preformed in a wide range of operating temperatures. We believe that such power-adaptive switching is of benefit for intelligent memory devices and neuromorphic electronics with low energy consumption. Adaptive energy-scaling resistive switching with active response and self-regulation via controllable insulator–metal transition shows promise in energy-efficient devices.
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