CdTe thin film solar cell with NiO as a back contact buffer layer
CdTe thin film solar cell with NiO as a back contact buffer layer
复制标题
以NiO为背接触缓冲层的CdTe薄膜太阳能电池
DOI：
10.1016/j.solmat.2017.05.006
复制
发表时间：
2017-09
影响因子：
6.9
通讯作者：
Wang Deliang
中科院分区：
文献类型：
--
作者：
Xiao Di;Li Xun;Wang Dongming;Li Qiang;Shen Kai;Wang Deliang
在这项工作中，p型NiO薄膜作为缓冲层应用在背接触碲化镉薄膜太阳能电池的制造。NiO层是通过电子束蒸发制备的。通过优化背接触NiO层厚度，制备出效率为12.17%，开路电压为790 mV的CdTe太阳电池。X射线光电子能谱研究表明，NiO与CdTe具有交错的能带排列。这样的电子能带结构对准允许从CdTe到NiO的平滑空穴传输，并且同时NiO充当表面场层以减少背接触界面处的电子复合，从而导致改善的Voc。该研究还表明，通过采用NiO作为缓冲层，CdTe太阳能电池制造所需的Cu要少得多，并且与具有传统Cu/Au双金属层作为背接触的CdTe太阳能电池相比，电池器件的稳定性显着增强。
In this work, p-type NiO thin film was applied as a buffer layer in the back contact for CdTe thin film solar cell fabrication. The NiO layers were prepared by electron beam evaporation. By optimizing NiO layer thickness in the back contact a CdTe solar cell with an efficiency of 12.17% and an open-circuit voltage Vocof 790 mV has been fabricated. X-ray photoelectron spectroscopy study showed that NiO has a staggered band alignment with CdTe. Such an electronic band structure alignment allows smooth hole transport from CdTe to NiO and at the same time NiO acts as a surface field layer to reduce electron recombination at the back contact interface, thus leading to improved Voc. This study also demonstrates that by employing NiO as a buffer layer, much less Cu was needed for the CdTe solar cell fabrication and the cell device stability had been significantly enhanced compared to the CdTe solar cell with a conventional Cu/Au bimetal layer as the back contact.
登录
查看更多内容
影响因子：
6.7
作者：
Ai, Lei;Fang, Guojia;Zhao, Xingzhong
通讯作者：
Zhao, Xingzhong
影响因子：
5.7
作者：
Juarez-Perez, Emilio J.;Wussler, Michael;Mora-Sero, Ivan
通讯作者：
Mora-Sero, Ivan
影响因子：
17.1
作者：
Xingtian Yin;Peng Chen;Meidan Que;Yonglei Xing;W. Que;C. Niu;J. Shao
通讯作者：
Xingtian Yin;Peng Chen;Meidan Que;Yonglei Xing;W. Que;C. Niu;J. Shao
影响因子：
6.9
作者：
Zhen Wang;Su-Hwan Lee;D. Kim;Ji-heon Kim;Jea‐Gun Park
通讯作者：
Zhen Wang;Su-Hwan Lee;D. Kim;Ji-heon Kim;Jea‐Gun Park
影响因子：
6.7
作者：
Wu, XZ
通讯作者：
Wu, XZ