Isotopic study of mid‐infrared vibrational modes in GaAs related to carbon and nitrogen impurities
Isotopic study of mid‐infrared vibrational modes in GaAs related to carbon and nitrogen impurities
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GaAs中与碳、氮杂质相关的中红外振动模式的同位素研究
DOI:
10.1002/pssb.201552028
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发表时间:
2015
期刊:
影响因子:
--
通讯作者:
V. Häublein
中科院分区:
文献类型:
--
作者:
H. Ch. Alt;H. E. Wagner;A. Glacki;Ch. Frank-Rotsch;V. Häublein
Fourier transform infrared absorption measurements have been carried out on GaAs crystals doped or implanted with carbon, nitrogen and oxygen. In the presence of carbon and nitrogen, thermally stable defects occur with strong molecular‐like bonding giving rise to absorption bands of vibrational character in the mid‐infrared. By implantation of the nitrogen isotopes14N and15N, a complex of the chemical composition CN2is identified. This defect is the origin for the mode at 2060 cm−1previously attributed to a (C, O)‐complex. A further absorption band at 1973 cm−1is tentatively attributed to the stretching mode of a CN entity.
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DOI:
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发表时间:
2007
期刊:
影响因子:
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U. Kretzer
DOI:
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发表时间:
2005
期刊:
影响因子:
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M. Jurisch
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发表时间:
2005
期刊:
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作者:
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DOI:
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发表时间:
2013
期刊:
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