Fermi surface topology and signature of surface Dirac nodes in LaBi.
Fermi surface topology and signature of surface Dirac nodes in LaBi.
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DOI：
10.1038/s41598-017-06697-9
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发表时间：
2017-07-24
影响因子：
4.6
通讯作者：
Mandal P
中科院分区：
文献类型：
--
作者：
Singha R;Satpati B;Mandal P
新的物质拓扑态是近年来凝聚态物理研究中发展迅速的领域之一。虽然从相对论粒子的基本物理角度来看，这些材料令人着迷，但由于潜在的技术应用，它们的奇异输运特性也同样令人信服。极端磁阻和超高载流子迁移率是拓扑材料的两个主要特征，经常被用作识别属于这一类的新化合物的主要标准。最近，Labi作为一种新的系统出现了，它表现出了上述性质。然而，它的能带结构的拓扑性质仍然没有得到解决。在这里，我们利用磁输运和磁化强度测量，探索了LaBi的体态和表面态。与以前的报道类似，在补偿了电子和空穴密度的情况下，观察到了极大的磁阻和高的载流子迁移率。用Shubnikov-de Haas和de Haas-van Alphen振荡技术分析了费米面的性质。在磁化强度测量中，观察到了一个显著的顺磁奇点，这表明了Labi表面态的非平凡性质。我们的研究明确地证实了Labi是一种三维拓扑绝缘体，在有隙的体带结构中可能存在线性色散。
Novel topological state of matter is one of the rapidly growing fields in condensed matter physics research in recent times. While these materials are fascinating from the aspect of fundamental physics of relativistic particles, their exotic transport properties are equally compelling due to the potential technological applications. Extreme magnetoresistance and ultrahigh carrier mobility are two such major hallmarks of topological materials and often used as primary criteria for identifying new compounds belonging to this class. Recently, LaBi has emerged as a new system, which exhibits the above mentioned properties. However, the topological nature of its band structure remains unresolved. Here, using the magnetotransport and magnetization measurements, we have probed the bulk and surface states of LaBi. Similar to earlier reports, extremely large magnetoresistance and high carrier mobility have been observed with compensated electron and hole density. The Fermi surface properties have been analyzed from both Shubnikov-de Haas and de Haas-van Alphen oscillation techniques. In the magnetization measurement, a prominent paramagnetic singularity has been observed, which demonstrates the non-trivial nature of the surface states in LaBi. Our study unambiguously confirms that LaBi is a three-dimensional topological insulator with possible linear dispersion in the gapped bulk band structure.
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