Investigation of dislocations in 8° off-axis 4H-SiC epilayer
Investigation of dislocations in 8° off-axis 4H-SiC epilayer
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8° 离轴 4H-SiC 外延层位错研究
DOI：
10.1088/1674-1056/19/7/076106
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发表时间：
2010
影响因子：
1.7
通讯作者：
Gai Qing
中科院分区：
文献类型：
--
作者：
Miao Rui;Zhang Yuming;Zhang Yi;Tang Xiaoyan;Gai Qing
本文报道用扫描电子显微镜观察了8 μ m离轴4 H-SiC外延层中位错的腐蚀形貌。结果表明，不同类型的位错对应不同的密度，在外延层中沿沿着某些晶向存在基面位错（BPD）排列和穿刃位错（TED）堆积群。结果表明，在这些位错中，螺纹螺位错（TSD）的弹性能最高，TED最低，因此TSD的密度低于TED。BPD可以转化为TEDs，而TSD尽管比TEDs具有更高的弹性能，但只能传播到表皮中。外延层中BPDs阵列的形成是由于面缺陷沿基面形成的大台阶沿着阻挡了上游原子，而TEDs堆积群的形成是由于外延层中位错群阻挡了位错的滑移。
This paper reports that the etching morphology of dislocations in 8 ◦ off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer.
影响因子：
1.8
作者：
D. Nakamura;S. Yamaguchi;I. Gunjishima;Y. Hirose;T. Kimoto
通讯作者：
D. Nakamura;S. Yamaguchi;I. Gunjishima;Y. Hirose;T. Kimoto
影响因子：
4
作者：
Fujiwara, H;Kimoto, T;Matsunami, H
通讯作者：
Matsunami, H