Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.
Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.
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DOI：
10.1021/acsnano.1c07086
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发表时间：
2022-03-22
期刊：
影响因子：
17.1
通讯作者：
Radenovic A
中科院分区：
文献类型：
--
作者：
Glushkov E;Macha M;Räth E;Navikas V;Ronceray N;Cheon CY;Ahmed A;Avsar A;Watanabe K;Taniguchi T;Shorubalko I;Kis A;Fantner G;Radenovic A
HBN已经成为纳米光子学和量子传感的一个有前途的材料平台，具有光学活性缺陷，具有优异的性能，如高亮度和大光谱调谐。然而，在hBN中发射器的确定性空间定位的精确控制在很长一段时间内仍然难以捉摸，限制了它们在混合器件中的适当相关表征和应用。最近，聚焦离子束（FIB）系统被证明是有用的工程师几种类型的空间定义的发射器具有各种结构和物理特性。在这里，我们系统地探讨了物理过程，导致使用FIB在hBN中产生光学活性缺陷，并发现光束-衬底相互作用在缺陷的形成中起着关键作用。这些发现证实了使用透射电子显微镜，揭示了局部机械退化的hBN层和局部非晶化的离子束照射hBN。此外，我们表明，在暴露于水，非晶化hBN经历了两种缺陷类型之间的结构和光学过渡具有独特的发射性能。此外，使用超分辨率光学显微镜与原子力显微镜相结合，我们查明了缺陷部位内发射体的确切位置，确认了缺陷边缘作为荧光发射主要来源的作用。这为hBN中光学活性缺陷的FIB辅助工程奠定了基础，具有高空间和光谱控制，适用于从集成光子学到纳米级传感和纳米流体的应用。
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically active defects in hBN using FIB and find that beam–substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy, which reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that, upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to nanoscale sensing, and to nanofluidics.
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影响因子：
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