A performance comparison of SiC and Si devices in a bi-directional converter for distributed energy storage systems
A performance comparison of SiC and Si devices in a bi-directional converter for distributed energy storage systems
复制标题
分布式储能系统双向转换器中 SiC 和 Si 器件的性能比较
DOI：
10.1109/pedg.2016.7527041
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Daranagama T
中科院分区：
文献类型：
--
作者：
Daranagama T
由于碳化硅（SiC）器件具有比硅（Si）更高的临界电场、更大的带隙和更高的热导率等材料特性所带来的上级电学特性，因此SiC器件在电力电子工业中变得越来越受欢迎。在过去的十年中，许多SiC器件类型已经商业化。本文对基于SiC MOSFET、SiC BJT和SiC SJT的双向转换器的性能进行了比较，目标是储能应用，沿着与Si IGBT版本一起进行。计算了导通损耗和开关损耗，并分别与实测正向I-V曲线和箝位电感测试配置中的双脉冲测试进行了比较。为了验证连续操作，当双向转换器在DC/DC转换模式下操作时的器件性能进行了比较。转换器的效率已在20和40 kHz的开关频率和高达6.6 kW的输出功率和27 A的输入电流水平，每个半桥进行了评估。从讨论的结果中可以清楚地看出，SiC器件在开关性能方面优于Si IGBT。在250 V至500 V升压转换期间，在20 kHz下，与Si IGBT相比，SiC MOSFET转换器在4.9 kW功率输出下的损耗降低了50.8%。在40 kHz时，SiC MOSFET和SiC BJT转换器的峰值效率分别为98.8%和98.6%。该比较的目的是确定并制定关于使用每种器械技术的最适当情况的指南。
Due to its superior electrical characteristics resultant from material properties such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si), Silicon Carbide (SiC) devices are becoming increasingly popular in the power electronics industry. Many SiC device types have been commercialised during the past decade. In this paper, a performance comparison between SiC MOSFET, SiC BJT and SiC SJT based bi-directional converters, targeting energy storage applications, has been made along with a Si IGBT version. Conduction losses and switching losses have been calculated and compared with the aid of measured forward I-V curves and double-pulse testing in a clamped-inductive test configuration, respectively. In order to validate the continuous operation, the device performances when operating the bi-directional converter in DC/DC conversion mode have been compared. The efficiency of the converters have been assessed at 20 and 40 kHz switching frequencies and up to 6.6 kW output powers and 27 A input current levels per half-bridge. From the results discussed, it is clear that the SiC devices surpass Si IGBTs in switching performance. During 250 V to 500 V boost conversion at 20 kHz, a loss reduction of 50.8% has been observed at a 4.9 kW power output in SiC MOSFET converter, in comparison to the Si IGBTs. At 40 kHz, peak efficiencies of 98.8% and 98.6% have been demonstrated by SiC MOSFET and SiC BJT converters, respectively. The aim of this comparison is to identify and set a guideline as to the most appropriate circumstances for using each device technology.
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影响因子：
6.7
作者：
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通讯作者：
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DOI：
--
发表时间：
2011
期刊：
Applied Power Electronics Conference
影响因子：
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通讯作者：
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DOI：
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发表时间：
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期刊：
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作者：
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DOI：
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发表时间：
2000
期刊：
影响因子：
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作者：
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通讯作者：
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