In Situ Electrochemical ATR-FTIR Spectroscopic Investigation of Hydrogen-Terminated Si(110) Surface in Dilute NH 4 F Solution
In Situ Electrochemical ATR-FTIR Spectroscopic Investigation of Hydrogen-Terminated Si(110) Surface in Dilute NH 4 F Solution
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稀 NH 4 F 溶液中氢封端 Si(110) 表面的原位电化学 ATR-FTIR 光谱研究
DOI：
10.1149/1.1407833
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发表时间：
2001
影响因子：
3.9
通讯作者：
J. Ye
中科院分区：
文献类型：
--
作者：
Yong Wang;Sam F. Y. Li;J. Ye
用现场实时和电化学衰减全反射傅里叶变换红外光谱(ATR-FTIR)研究了稀氨基氟化铵溶液中Si(111)表面氢化物结构与刻蚀时间和外加电势的关系。原位实时ATR-FTIR结果表明，在稀NH4F溶液中，Si(111)表面保持H端基，在阴极电位控制下，Si(111)面上的氢化物与水分子有较强的相互作用。原位电化学ATR-FTIR谱的电位依赖关系表明，在开路电位(OCP)下，SiL11)表面没有氧化物，只有在OCP的正电位下才形成SiHO3。红外粗糙度因子是指单氢化氢或二氢化氢与(111)面上单氢化氢的比值，表明在阴极电位下，单氢化物链阶梯是NH4F中Si(111)表面的主要缺陷。在Si(111)表面上，水平(D‘)和垂直(D)二氢化合物占主导地位，通过阳极电位氧化导致表面粗化。
In situ real-time and electrochemical attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy has been employed to study the dependence of hydride structures of an Si(111) surface in diluted NH 4 F solution on etching time and applied potential. The in situ real-time ATR-FTIR result shows that the Si(111) surface remains H terminated in diluted NH 4 F solution, and the hydride on Si( 111) has a strong interaction with water molecules under cathodic potential control. Potential dependence of the in situ electrochemical ATR-FTIR spectra reveals that Sill 11) surface is free of oxide at the open circuit potential (OCP) and SiHO 3 is formed only at potentials positive of the OCP. Infrared roughness factors, defined as the ratio of monohydride at steps or dihydride over the monohydride on the (111) plane, suggest that monohydride chain steps are the dominating defects on the Si( 111) surface in NH 4 F at cathodic electrode potential. Horizontal (D') and vertical (D) dihydrides are predominant on the Si( 11 1 ) surface leading to roughened morphology via oxidation at anodic potential.
影响因子：
4
作者：
HIGASHI, GS;CHABAL, YJ;RAGHAVACHARI, K
通讯作者：
RAGHAVACHARI, K
DOI：
10.1116/1.575980
发表时间：
1989-05-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
CHABAL, YJ;HIGASHI, GS;BURROWS, VA
通讯作者：
BURROWS, VA