Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at high temperature
Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at high temperature
复制标题
用于高温应变传感的具有AlN/金属/Si多层结构的芯片级正交表面声波器件
DOI：
10.1016/j.sna.2021.113298
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发表时间：
2021-12
期刊：
影响因子：
--
通讯作者：
Wen Wang
中科院分区：
文献类型：
--
作者：
Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng Xue;Yong Liang;Minghui Lu;Wen Wang
研究了一种基于AlN薄膜的表面声波（SAW）高温应变传感装置。提出了AlN/metal/Si多层复合材料结构构建应变传感芯片，并采用有限元方法对SAW的传播进行了理论分析。采用磁控溅射技术在Si衬底上制备了高质量的AlN压电薄膜，然后通过光刻技术制备了Pt电极，构建了工作频率为607 MHz和620 MHz的单端口谐振腔模式传感芯片。为了补偿温度交叉灵敏度和提高应变灵敏度，将两个传感芯片垂直放置在陶瓷封装上，然后提取差频信号来评估外加应变。搭建了高温应变测试平台，对所制备的正交结构应变传感器进行了表征，成功地在550℃0 ~ 500 μ ε范围内获得了0.84 ppm/μ ε的应变灵敏度，在20 ~ 600℃范围内获得了0.624 ppm/°C的优异温度稳定性。
A new AlN film-based surface acoustic wave (SAW) device was explored for sensing strain at high temperature. AlN/metal/Si multilayer composite structure was proposed to construct the strain sensing chip, and the corresponding theoretical analysis on SAW propagation were performed by using finite element method (FEM). High-quality AlN piezoelectric thin-film was prepared by using magnetron sputtering on Si substrate, and Pt electrodes was then lithographically prepared to build the sensing chips with one-port resonator pattern operating at 607 MHz and 620 MHz. To compensate the temperature cross sensitivity and enhance the strain sensitivity, two sensing chips were positioned perpendicular on a ceramic package, then the differential frequency signal was extracted to evaluate the applied strain. A high-temperature strain testing platform was constructed to characterize the prepared strain sensor with orthometric structure, larger strain sensitivity of 0.84 ppm/μ ε at 550° C in the range 0–500 μ ε and excellent temperature stability of 0.624 ppm/° C at the temperature range of 20–600° C were achieved successfully.
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DOI：
10.1109/ultsym.2014.0611
发表时间：
2014-10
期刊：
2014 IEEE International Ultrasonics Symposium
影响因子：
--
作者：
Wang Wen;Hu Yangqing;Liu Xinlu;He Shitang
通讯作者：
Wang Wen;Hu Yangqing;Liu Xinlu;He Shitang
DOI：
10.1109/58.726466
发表时间：
1998-09-01
影响因子：
3.6
作者：
Buff, W;Klett, S;Goroll, M
通讯作者：
Goroll, M
DOI：
10.1109/tuffc.2018.2836434
发表时间：
2018-05
期刊：
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
影响因子：
--
作者：
C. Hirschle;J. Schreuer
通讯作者：
C. Hirschle;J. Schreuer
影响因子：
4.6
作者：
Lee, YJ;Kim, HB;Cho, HM
通讯作者：
Cho, HM
影响因子：
4
作者：
Sanz-Hervás, A;Clement, M;Sangrador, J
通讯作者：
Sangrador, J